參數(shù)資料
型號: SPD10N10
廠商: INFINEON TECHNOLOGIES AG
英文描述: CAP 470PF 200V 10% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
中文描述: SIPMOS功率晶體管
文件頁數(shù): 4/8頁
文件大小: 125K
代理商: SPD10N10
SPD 10N10
Data Sheet
4
05.99
Electrical Characteristics
, at
T
j = 25 C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Dynamic Characteristics
Gate to source charge
V
DD
= 80 V,
I
D
= 10 A
Gate to drain charge
V
DD
= 80 V,
I
D
= 10 A
Gate charge total
V
DD
= 80 V,
I
D
= 10 A,
V
GS
= 0 to 10 V
Gate plateau voltage
V
DD
= 80 V,
I
D
= 10 A
7
nC
4.5
Q
gs
-
-
29.6
Q
gd
45
-
46
69
Q
g
V
(plateau)
6.8
-
V
-
Reverse Diode
Inverse diode continuous forward current
T
C
= 25 C
Inverse diode direct current,pulsed
T
C
= 25 C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 20 A
Reverse recovery time
V
R
= 30 V,
I
F
=
I
S
, d
i
F
/d
t
= 100 A/μs
Reverse recovery charge
V
R
= 30 V,
I
F=
l
S
, d
i
F
/d
t
= 100 A/μs
I
S
-
-
10
A
I
SM
-
-
40
V
SD
-
1.4
V
1.6
t
rr
-
170
ns
255
Q
rr
-
μC
0.3
0.45
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