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參數資料
| 型號： | SPD505SMSTXV |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 整流器 |
| 英文描述： | 5 A, 500 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, SMS, 2 PIN |
| 文件頁數： | 2/2頁 |
| 文件大?。?/td> | 40K |
| 代理商： | SPD505SMSTXV |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0105B
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SPD502-SPD506
and
SPD502SMS - SPD506SMS
Electrical Characteristics
Symbol
Max
Units
Instantaneous Forward Voltage Drop
(IF = 5 Adc, TA = 25C, 300 s pulse)
VF
1.6
Vdc
Instantaneous Forward Voltage Drop
(IF = 5Adc, TA = -55C, 300 s pulse)
VF
1.75
Vdc
Reverse Leakage Current
(Rated VR, TA = 25C, 300 s pulse minimum)
IR
10
μA
Reverse Leakage Current
(Rated VR, TA = 100C, 300 s pulse minimum)
IR
1
mA
Junction Capacitance
(VR = 10 Vdc, TA = 25C, f = 1MHz)
CJ
50
pF
Reverse Recovery Time
(IF = 500 mA, IR = 1A, IRR = 0.25A, TA = 25C)
trr
40
nsec
Case Outline: (Axial)
B
C
A
D
DIMENSIONS
DIM
MIN
MAX
A
.140”
.170”
B
.170”
.230”
C
.047”
.053”
D
1.00”
---
Case Outline:
Surface Mount Square Tab
DIMENSIONS
DIM
MIN
MAX
A
.172”
.180”
B
.220”
.270”
C
.020”
.035”
D
.002”
---
相關PDF資料 |
PDF描述 |
|---|---|
| SPD506SMSTX | 5 A, 600 V, SILICON, RECTIFIER DIODE |
| SPD504SMS | 5 A, 400 V, SILICON, RECTIFIER DIODE |
| SPD503SMSS | 5 A, 300 V, SILICON, RECTIFIER DIODE |
| SPD506TXV | 5 A, 600 V, SILICON, RECTIFIER DIODE |
| SPD5614SMTXV | 1 A, 200 V, SILICON, SIGNAL DIODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SPD506 | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:5 AMPS 200 - 600 VOLTS 40 nsec HYPER FAST RECTIFIER |
| SPD506SMS | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:5AMP 200-600VOLTS 40 nsec HYPER FAST RECTIFIER |
| SPD50N03S2-07 | 功能描述:MOSFET TRANSISTOR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SPD50N03S2-07 G | 功能描述:MOSFET POWER MOSFET DISCRETE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SPD50N03S2-07_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated |
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