參數(shù)資料
型號(hào): SPI80N08S2-07
廠(chǎng)商: INFINEON TECHNOLOGIES AG
英文描述: OptiMOS Power-Transistor
中文描述: 的OptiMOS功率晶體管
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 422K
代理商: SPI80N08S2-07
2003-05-09
Page 2
SPI80N08S2-07
SPP80N08S2-07,SPB80N08S2-07
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
R
thJC
R
thJA
R
thJA
-
0.3
0.5
K/W
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
-
-
62
@ min. footprint
@ 6 cm
2
cooling area
3)
-
-
-
-
62
40
Electrical Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V,
I
D
=1mA
Gate threshold voltage,
V
GS
=
V
DS
I
D
=250μA
Zero gate voltage drain current
V
(BR)DSS
75
-
-
V
V
GS(th)
2.1
3
4
V
DS
=75V,
V
GS
=0V,
T
j
=25°C
V
DS
=75V,
V
GS
=0V, Tj=125°C
2)
Gate-source leakage current
I
DSS
-
-
0.01
1
1
100
μA
V
GS
=20V,
V
DS
=0V
Drain-source on-state resistance
4)
I
GSS
-
1
100
nA
V
GS
=10V,
I
D
=66A
V
GS
=10,
I
D
=66A, SMD version
R
DS(on)
-
-
5.7
5.4
7.4
7.1
m
1Current limited by bondwire ; with an
R
thJC
= 0.5K/W the chip is able to carry
I
D
= 132A at 25°C, for detailed
information see app.-note ANPS071E available at
www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
4Diagrams are related to straight lead versions
相關(guān)PDF資料
PDF描述
SPP80N08S2-07 OptiMOS Power-Transistor
SPB80N08S2-07 OptiMOS Power-Transistor
SPB80N08S2L-07 OptiMOS Power-Transistor
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