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參數(shù)資料
| 型號： | SPN2342S23RG |
| 英文描述： | N-Channel Enhancement Mode MOSFET |
| 中文描述： | N溝道增強型MOS管 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 211K |
| 代理商： | SPN2342S23RG |
ELECTRICAL CHARACTERISTICS
(T
A
=25
Un
℃
less otherwise noted)
2006/05/30
Ver.1
Page 3
SPN2342
N-Channel Enhancement Mode MOSFET
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
V
(BR)DSS
V
GS
=0V,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
V
DS
=0V,V
GS
=±12V
V
DS
=20V,V
GS
=0V
I
DSS
V
DS
=20V,V
GS
=0V
T
J
=55
℃
20
0.4
1.0
±100
1
V
nA
Zero Gate Voltage Drain Current
10
uA
On-State Drain Current
I
D(on)
V
DS
≥
5
V,V
GS
=4.5V
6
A
V
GS
= 4.5V,I
D
=5.0A
V
GS
= 2.5V,I
D
=4.5A
V
GS
= 1.8V,I
D
=4.0A
V
DS
=15V,I
D
=5.0A
I
S
=1.0A,V
GS
=0V
0.026
0.029
0.035
30
0.8
0.035
0.040
0.048
1.2
Drain-Source On-Resistance
R
DS(on)
Forward Transconductance
Diode Forward Voltage
gfs
V
SD
S
V
Dynamic
Total Gate Charge
Q
g
10
13
Gate-Source Charge
Q
gs
1.4
Gate-Drain Charge
Q
gd
V
DS
=10V,V
GS
=4.5V
I
D
≡
5.0A
2.1
nC
Input Capacitance
C
iss
600
Output Capacitance
Reverse Transfer Capacitance
C
oss
C
rss
120
100
V
DS
=10V,V
GS
=0V
f=1MHz
pF
t
d(on)
15
25
Turn-On Time
t
r
40
60
t
d(off)
45
65
Turn-Off Time
t
f
V
DD
=10V,R
L
=10
I
D
≡
1.0A,V
GEN
=4.5V
R
G
=6
30
40
ns
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