參數(shù)資料
型號(hào)： SS16-HE3
廠(chǎng)商： VISHAY SEMICONDUCTORS
元件分類(lèi)： 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率)
英文描述： 1 A, 60 V, SILICON, SIGNAL DIODE, DO-214AC
封裝： LEAD FREE, PLASTIC, SMA, 2 PIN
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 337K
代理商： SS16-HE3
Vishay General Semiconductor
SS12 thru SS16
Document Number 88746
20-Feb-06
www.vishay.com
1
DO-214AC (SMA)
Surface Mount Schottky Barrier Rectifier
FEATURES
Low profile package
Ideal for automated placement
Guardring for overvoltage protection
Low power losses, high efficiency
Low forward voltage drop
High surge capability
Meets MSL level 1, per J-STD-020C
Solder Dip 260 °C, 40 seconds
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters, free-
wheeling, dc-to-dc converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes the cathode end
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
1.0 A
VRRM
20 V to 60 V
IFSM
40 A
VF
0.50 V, 0.70 V
Tj max.
125 °C, 150 °C
Note:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
MAXIMUM RATINGS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
SS12
SS13
SS14
SS15
SS16
UNIT
Device marking code
S2
S3
S4
S5
S6
V
Maximum repetitive peak reverse voltage
VRRM
20
30
40
50
60
V
Maximum RMS voltage
VRMS
14
21
28
35
42
V
Maximum DC blocking voltage
VDC
20
30
40
50
60
V
Maximum average forward rectified current at TL (see Fig. 1)
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
40
A
Voltage rate of change (rated VR)
dv/dt
10000
V/s
Operating junction temperature range
TJ
- 65 to + 125
- 65 to + 150
°C
Storage temperature range
TSTG
- 65 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
SS12
SS13
SS14
SS15
SS16
UNIT
Maximum instantaneous forward
voltage
at 1.0 A (1)
VF
0.50
0.75
V
Maximum DC reverse current at rated
DC blocking voltage (1)
TA = 25 °C
IR
0.2
mA
TA = 100 °C
6.0
5.0
相關(guān)PDF資料
PDF描述
SS12/61T 1 A, 20 V, SILICON, SIGNAL DIODE, DO-214AC
SS15 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC
SS14T 1 A, 40 V, SILICON, SIGNAL DIODE, DO-214AC
SS12-HE3 1 A, 20 V, SILICON, SIGNAL DIODE, DO-214AC
SS15-E3 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SS16HE3/5AT 功能描述:肖特基二極管與整流器 60 Volt 1.0 Amp 40 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
SS16HE3/61T 功能描述:肖特基二極管與整流器 60 Volt 1.0 Amp 40 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
SS16-HE3/61T 制造商:Vishay Intertechnologies 功能描述:Diode Schottky 60V 1A
SS16HE3_A/H 制造商:Vishay Semiconductors 功能描述:DIODE; Diode Type:Schottky; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:60V; Forward Current If(AV):1A; Forward Voltage VF Max:750mV; Forward Surge Current Ifsm Max:40A; Operating Temperature Min:-65C ;RoHS Compliant: Yes
SS16HE361T 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Surface Mount Schottky Barrier Rectifier
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