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參數(shù)資料
| 型號： | SS2H9-HE3/84A |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 2 A, 90 V, SILICON, RECTIFIER DIODE, DO-220AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMP, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 89K |
| 代理商： | SS2H9-HE3/84A |
Vishay General Semiconductor
SS2PH9 & SS2PH10
New Product
Document Number 84682
26-Jun-06
www.vishay.com
1
High-Voltage Surface Mount Schottky Barrier Rectifiers
High Barrier Technology for Improved High Temperature Performance
FEATURES
Very low profile - typical height of 1.0 mm
Ideal for automated placement
Guarding for Overvoltage protection
Low power losses, high efficiency
Low forward voltage drop
Low leakage current
Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling, dc-
to-dc converters and polarity protection applications.
MECHANICAL DATA
Case: DO-220AA (SMP)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes the cathode end
DO-220AA (SMP)
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
2.0 A
VRRM
90 V, 100 V
IFSM
50 A
EAS
11.25 mJ
VF
0.62 V
IR max.
1.0 A
Tj max.
175 °C
Note:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS2PH9
SS2PH10
UNIT
Device marking code
29
210
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Maximum average forward rectified current (see Fig. 1)
IF(AV)
2.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
50
A
Non-repetitive avalanche energy at Tj = 25 °C, IAS = 1.5 A, L = 10 mH
EAS
11.25
mJ
Voltage rate of change (rated VR)
dv/dt
10000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 175
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP
MAX.
UNIT
Maximum instantaneous
forward voltage (1)
at IF = 3 A,
Tj = 25 °C
Tj = 125 °C
VF
0.77
0.62
0.80
0.66
V
Maximum DC reverse current
at rated VR
(1)
Tj = 25 °C
Tj = 125 °C
IR
0.1
60
1.0
0.5
A
mA
Typical junction capacitance
at 4.0 V, 1 MHz
CJ
65
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SS2H10HE3 | 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA |
| SS2P2HE3/84A | 2 A, 20 V, SILICON, RECTIFIER DIODE, DO-220AA |
| SS2P3HE3/85A | 2 A, 30 V, SILICON, RECTIFIER DIODE, DO-220AA |
| SS2P2-E3/84A | 2 A, 20 V, SILICON, RECTIFIER DIODE, DO-220AA |
| SS2P2-E3/85A | 2 A, 20 V, SILICON, RECTIFIER DIODE, DO-220AA |
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