- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383831 > SSF10N60A (FAIRCHILD SEMICONDUCTOR CORP) N-Channel Power MOSFET（6.9A，600V，0.8Ω）(N溝道功率MOS場(chǎng)效應(yīng)管（漏電流6.9A, 漏源電壓600V，導(dǎo)通電阻0.8Ω）) PDF資料下載
參數(shù)資料
| 型號(hào)： | SSF10N60A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-Channel Power MOSFET（6.9A，600V，0.8Ω）(N溝道功率MOS場(chǎng)效應(yīng)管（漏電流6.9A, 漏源電壓600V，導(dǎo)通電阻0.8Ω）) |
| 中文描述： | 6.9 A, 600 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3PF, 3 PIN |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 256K |
| 代理商： | SSF10N60A |
N-C HANNEL
POWER MOSFET
Electrical Characteristics
(T
C
=25 unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
BV
DSS
BV/ T
J
V
GS(th)
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain( “Miller” ) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
DS(on)
I
GSS
I
DSS
V
V
nA
A
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=250 A
I
D
=250 A
See Fig 7
V
DS
=5V,I
D
=250 A
V
GS
=30V
V
GS
=-30V
V
DS
=600V
V
DS
=480V,T
C
=125
V
GS
=10V,I
D
=3.45A
V
DS
=50V,I
D
=3.45A
V
DD
=300V,I
D
=10A,
R
G
=6.2
See Fig 13
V
DS
=480V,V
GS
=10V,
I
D
=10A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
C
μ
Integral reverse pn-diode
in the MOSFET
T
J
=25 ,I
S
=6.9A,V
GS
=0V
T
J
=25 ,I
F
=10A
di
F
/dt=100A/ s
C
V/
o
C
O
1
O
4
O
4
C
C
O
4
O
4
O
5
O
4
O
4
O
5
o
C
SSF10N60A
600
--
2.0
--
--
--
--
--
0.66
--
--
--
--
--
190
78
20
23
85
30
74
12
35.4
--
--
4.0
100
-100
25
250
0.8
--
2270
220
90
50
55
180
70
95
--
--
7.35
1750
--
--
--
440
4.7
6.9
40
1.4
--
--
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=20mH, I
AS
=6.9A, V
DD
=50V, R
G
=27 , Starting T
J
=25
I
SD
10A, di/dt 150A/ s, V
DD
BV
DSS
, Starting T
J
=25
Pulse Test : Pulse Width = 250 s, Duty Cycle 2%
Essentially Independent of Operating Temperature
O
5
O
1
O
O
3
O
2
4
o
C
o
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SSF10N80A | N-Channel Power MOSFET（6.5A，800V，0.95Ω）(N溝道功率MOS場(chǎng)效應(yīng)管（漏電流6.5A, 漏源電壓800V，導(dǎo)通電阻0.95Ω）) |
| SSF10N90A | N-Channel Power MOSFET（6.5A，900V，1.2Ω）(N溝道功率MOS場(chǎng)效應(yīng)管（漏電流6.5A, 漏源電壓900V，導(dǎo)通電阻1.2Ω）) |
| SSF45N20A | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 26A I(D) | TO-247VAR |
| SSF4N80AS | TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 3.5A I(D) | TO-247VAR |
| SSF4N90AS | TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3.5A I(D) | TO-247VAR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SSF10N60B | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSF10N80A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| SSF11 | 制造商:Hubbell Premise Wiring 功能描述:WALL PLATE STAINLESS STEEL 1 制造商:Hubbell Wiring Device-Kellems 功能描述:WALL PLATE, STAINLESS STEEL, 1 MODULE; Series:-; Accessory Type:Faceplate; For Use With:Audio/Video Keystone Connectors and XCELERATOR Jacks; No. of Module Spaces:1; Connector Body Material:Stainless Steel; Connector Color:- ;RoHS Compliant: Yes 制造商:Hubbell Wiring Device-Kellems 功能描述:PLATE, WALL,SS,1-G,1PORT |
| SSF-110-01-S-D | 制造商:Samtec Inc 功能描述:CONN SCKT STRP SKT 20 POS 2.54MM SLDR ST TH - Bulk |
| SSF-110-02-S-D | 制造商:Samtec Inc 功能描述:CONN SCKT STRP SKT 20 POS 2.54MM SLDR ST SMD - Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。