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參數(shù)資料
| 型號： | SST112-T1 |
| 英文描述： | TRANSISTOR J-FET SOT-23 |
| 中文描述： | 晶體管的J - FET的SOT - 23封裝 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 76K |
| 代理商： | SST112-T1 |
J/SST111 Series
Siliconix
S-52424—Rev. D, 14-Apr-97
3
Typical Characteristics
160
120
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
On-Resistance vs. Drain Current
100
0
–10
0
200
160
0
–
I
D
r
DS
I
DSS
r
DS
@ I
D
= 1 mA, V
GS
= 0
I
DSS
@ V
DS
= 20 V, V
GS
= 0
100
0
1
10
100
V
GS(off)
= –2 V
–4 V
–8 V
T
A
= 25 C
On-Resistance vs. Temperature
200
–55
25
125
0
–15
85
I
D
= 1 mA
r
DS
changes X 0.7%/ C
V
GS(off)
= –2 V
–4 V
–8 V
Turn-On Switching
5
0
–10
4
3
2
1
0
t
r
S
t
d(on)
@
I
D
= 3 mA
t
d(on)
@
I
D
= 12 mA
t
r
approximately independent of I
D
V
DD
= 5 V, R
G
= 50
V
GS(L)
= –10 V
Turn-Off Switching
30
0
10
24
18
12
6
0
t
f
@
V
GS(off)
= –2 V
t
f
@
V
GS(off)
= –8 V
t
d(off)
t
d(off)
independent of device V
GS(off)
V
DD
= 5 V, V
GS(L)
= –10 V
Capacitance vs. Gate-Source Voltage
30
–20
24
18
12
6
0
C
f = 1 MHz
C
iss
@ V
DS
= 0 V
C
rss
@ V
DS
= 0 V
0
V
GS(off)
– Gate-Source Cutoff Voltage (V)
T
A
– Temperature ( C)
V
GS
– Gate-Source Voltage (V)
V
GS(off)
– Gate-Source Cutoff Voltage (V)
I
D
– Drain Current (mA)
I
D
– Drain Current (mA)
80
60
40
20
80
40
80
60
40
20
–2
–4
–6
–8
–35
120
80
40
5
45
65
105
–2
–4
–6
–8
2
4
6
8
–4
–8
–12
–16
S
r
D
–
)
r
D
–
)
r
D
–
)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST112-T1-E3 | 功能描述:JFET 55V 5mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| SST113 | 功能描述:JFET 55V 2mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| SST113 | 制造商:Vishay Siliconix 功能描述:TRANSISTOR JFET N SOT-23 |
| SST113_SOT-23 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:N-CHANNEL JFET |
| SST1130 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 200MA I(C) | SOT-23 |
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