參數(shù)資料
型號: SST309
廠商: Linear Integrated Systems
英文描述: SINGLE N-CHANNEL HIGH FREQUENCY JFET
中文描述: 單個N -溝道場效應(yīng)高頻
文件頁數(shù): 1/2頁
文件大?。?/td> 26K
代理商: SST309
N-Channel JFET
HghFrequency Ampifier
J308 – J310 /SST308 – SST310
FEATURES
Industry Standard Part in Low Cost Plastic Package
High Power Gain
Low Noise
Dynamic Range Greater Than 100dB
Easily Matched to 75
Input
APPLICATIONS
VHF/UHF Amplifiers
Oscillators
Mixers
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise specified)
Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25V
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . -25V
Continuous Forward Gate Current . . . . . . . . . . . . . . . . -10mA
Storage Temperature Range . . . . . . . . . . . . . -55
o
C to +150
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +135
o
C
Lead Temperature (Soldering, 10sec). . . . . . . . . . . . . +300
o
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Derate above 25
o
C . . . . . . . . . . . . . . . . . . . . . . 3.27mW/
o
C
NOTE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
J308-310
SST308-310 Plastic SOT-23
For Sorted Chips in Carriers see U308 series.
Package
Plastic TO-92
Temperature Range
-55
o
C to +135
o
C
-55
o
C to +135
o
C
C ORPORATION
TO-92
SG
D
5021
SOT-23
G
S
D
PRODUCT MARKING (SOT-23)
SST308
SST309
SST310
Z08
Z09
Z10
相關(guān)PDF資料
PDF描述
SST310 SINGLE N-CHANNEL HIGH FREQUENCY JFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SST309_SOT-23 制造商:MICROSS 制造商全稱:MICROSS 功能描述:N-CHANNEL JFET
SST309-E3 功能描述:JFET 35V 12mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流(Vgs=0 時的 Idss):50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
SST309-E3 制造商:Vishay Siliconix 功能描述:JFET
SST309-T1 功能描述:JFET 35V 12mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流(Vgs=0 時的 Idss):50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
SST309-T1-E3 功能描述:JFET 35V 12mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流(Vgs=0 時的 Idss):50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel