參數(shù)資料
型號： SST309
廠商： Linear Integrated Systems
英文描述： SINGLE N-CHANNEL HIGH FREQUENCY JFET
中文描述： 單個N -溝道場效應(yīng)高頻
文件頁數(shù)： 2/2頁
文件大小： 26K
代理商： SST309
ELECTRICAL CHARACTERISTICS
(Continued) (T
A
= 25
o
C unless otherwise specified)
SYMBOL
PARAMETER
308
309
310
UNITS
TEST CONDITIONS
MIN
TYP MAX MIN
TYP MAX MIN
TYP MAX
C
gd
Gate-Drain Capacitance
1.8
2.5
1.8
2.5
1.8
2.5
pF
V
DS
= 10V,
V
GS
= -10
f = 1MHz
(Note 2)
C
gs
Gate-Source Capacitance
4.3
5.0
4.3
5.0
4.3
5.0
e
n
Equivalent Short-Circuit
Input Noise Voltage
10
10
√
4ónVXIàXBD
nV
= 10V,
= 10mA
f = 100Hz
(Note 2)
Re
(Vfs)
Common-Source Forward
Transconductance
12
12
12
μ
S
V
DS
= 10V,
I
D
= 10mA
(Note 2)
f = 105MHz
Re
(Vfg)
Common-Gate Input
Conductance
14
14
14
Re
(Vis)
Common-Source Input
Conductance
0.4
0.4
0.4
Re
(Vos)
Common-Source Output
Conductance
0.15
0.15
0.15
G
pg
Common-Gate Power Gain
at Noise Match
16
16
16
dB
NF
Noise Figure
1.5
1.5
1.5
G
pg
Common-Gate Power Gain
at Noise Match
11
11
11
f = 450MHz
NF
Noise Figure
2.7
2.7
2.7
NOTES: 1.
Pulse test PW 300
μ
s, duty cycle
≤
3%.
2.
For design reference only, not 100% tested.
J308 – J310 /SST308 – SST310
C ORPORATION
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C unless otherwise specified)
SYMBOL
PARAMETER
308
309
310
UNITS
TEST CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP
MAX
BV
GSS
Gate-Source Breakdown
Voltage
-25
-25
-25
V
I
G
= -1
μ
A, V
DS
= 0
I
GSS
Gate Reverse Current
-1.0
-1.0
-1.0
nA
V
GS
= -15V,
-1.0
-1.0
-1.0
μ
A
V
DS
= 0
T
A
= 125
o
V
GS(off)
Gate-Source
Cutoff Voltage
-1.0
-6.5
-1.0
-4.0
-2.0
-6.5
V
VDS = 10V, I
D
= 1nA
I
DSS
Saturation Drain Current
(Note 1)
12
60
12
30
24
60
mA
V
DS
= 10V, V
GS
= 0
V
GS(f)
Gate-Source
Forward Voltage
1.0
1.0
1.0
V
V
DS
= 0, I
G
= 1mA
g
fs
Common-Source Forward
Transconductance
8,000
17,000
10,000 17,000
8,000
17,000
μ
S
V
DS
= 10V
I
D
= 10mA
(Note 2)
f = 1kHz
g
os
Common-Source Output
Conductance
250
250
250
g
fg
Common-Gate Forward
Transconductance
13,000
13,000
12,000
g
og
Common Gate Output
Conductance
150
150
150
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