參數(shù)資料
型號: SST89E54RC-33-C-NJE
廠商: Microchip Technology
文件頁數(shù): 12/71頁
文件大?。?/td> 0K
描述: IC MCU 8BIT 17KB FLASH 44PLCC
標準包裝: 26
系列: FlashFlex®
核心處理器: 8051
芯體尺寸: 8-位
速度: 33MHz
連通性: EBI/EMI,UART/USART
外圍設備: POR,WDT
輸入/輸出數(shù): 32
程序存儲器容量: 16KB(16K x 8)
程序存儲器類型: 閃存
EEPROM 大?。?/td> 1K x 8
RAM 容量: 512 x 8
電壓 - 電源 (Vcc/Vdd): 4.5 V ~ 5.5 V
振蕩器型: 外部
工作溫度: 0°C ~ 70°C
封裝/外殼: 44-LCC(J 形引線)
包裝: 管件
2011 Silicon Storage Technology, Inc.
DS25088A
10/11
2
FlashFlex MCU
SST89E52RC / SST89E54RC
Data Sheet
A Microchip Technology Company
Product Description
The SST89E52RC / SST89E54RC are members of the FlashFlex family of 8-bit microcontroller
products designed and manufactured with SST’s patented and proprietary SuperFlash CMOS
semiconductor process technology. The split-gate cell design and thick-oxide tunneling injector
offer significant cost and reliability benefits for our customers.The devices use the 8051 instruction
set and are pin-for-pin compatible with standard 8051 microcontroller devices.
The device comes with 17/9 KByte of on-chip flash EEPROM program memory which is divided
into 2 independent program memory partitions. The primary partition occupies 16/8 KByte of inter-
nal program memory space and the secondary partition occupies 1 KByte of internal program
memory space.
The flash memory can be programmed via a standard 87C5x OTP EPROM programmer fitted with a spe-
cial adapter and firmware for SST’s devices. During power-on reset, the devices can be configured as either
a slave to an external host for source code storage or a master to an external host for an in-system program-
ming (ISP) operation. The devices are designed to be programmed in-system on the printed circuit board for
maximum flexibility. An example of the bootstrap loader (BSL) in memory, demonstrating initial user program
code loading or subsequent user code updating via an ISP operation, is provided on the SST website. The
sample BSL is for the user’s reference only; SST does not guarantee its functionality.
In addition to 17/9 KByte of SuperFlash EEPROM program memory on-chip and 512 x8 bits of on-chip
RAM, the device can address up to 64 KByte of external program memory and up to 64 KByte of external
RAM.
The highly-reliable, patented SST SuperFlash technology and memory cell architecture have a number of impor-
tant advantages for designing and manufacturing flash EEPROMs. These advantages translate into significant cost
and reliability benefits for our customers.
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