參數(shù)資料
型號(hào)： ST52E430B/D
廠商： STMICROELECTRONICS
元件分類： 微控制器/微處理器
英文描述： 8-BIT, UVPROM, 20 MHz, MICROCONTROLLER, CDIP32
封裝： WINDOWED, SHRINK, CERAMIC, DIP-32
文件頁(yè)數(shù)： 41/120頁(yè)
文件大小： 502K
代理商： ST52E430B/D
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ST52T430/E430
3.1.5 Stand by Mode
The EPROM has a standby mode which reduces
the active current from 10mA (Programming
mode) to less than 100 mA. The Memory is placed
in standby mode by setting PHASE signal at high
level or when the EPROM Configuration register
value is 0 and PHASE signal is low.
3.1.5 ID code
It is possible to write a software identification code,
called ID code, to distinguish which software
version is stored in the memory.
64 Bytes are dedicated to store this code by using
the address values from 0 to 63.
It is possible to read or verify the ID Code also if the
Memory Lock Status is “0".
The signals timing is the same of a normal
operation.
3.2 Eprom Erasure
Thanks to the transparent window available in the
CDIP28W package, its memory contents may be
erased by exposure to UV light.
Erasure begins when the device is exposed to light
with a wavelength shorter than 4000. It should be
noted that sunlight, as well as some types of
artificial light, includes wavelengths in the
3000-4000 range which, on prolonged exposure,
can cause erasure of memory contents. It is thus
recommended that EPROM devices be fitted with
an opaque label over the window area in order to
prevent unintentional erasure.
The recommended erasure procedure for EPROM
devices consists of exposure to short wave UV
light having a wavelength of 2537. The minimum
recommended integrated dose (intensity x
expo-sure time) for complete erasure is
15Wsec/cm 2.
This is equivalent to an erasure time of 15-20
minutes using a UV source having an intensity of
12mW/cm 2 at a distance of 25mm (1 inch) from
the device window.
相關(guān)PDF資料
PDF描述
ST52F510F1M6 8-BIT, FLASH, 24 MHz, MICROCONTROLLER, PDSO20
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ST52F513F0M6 8-BIT, FLASH, 24 MHz, MICROCONTROLLER, PDSO20
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