參數(shù)資料
型號(hào)： ST6395B1
廠商： 意法半導(dǎo)體
英文描述： 8-BIT HCMOS MCUs FOR TV FREQUENCY SYNTHESIS WITH OSD
中文描述： 8位微控制器HCMOS電視頻率合成帶OSD
文件頁(yè)數(shù)： 20/68頁(yè)
文件大?。?/td> 560K
代理商： ST6395B1
MEMORY SPACES
(Continued)
EEPROM Description
The dataspace of ST639xfamily from 00h to 3Fh
is paged as described in Table 5. 384 bytes of
EEPROM located in six pages of 64 bytes (pages
0,1,2,3,4 and 5, see Table 5).
Through the programming of the Data RAM Bank
Register (DRBR=E8h) the user can select the
bank or page leaving unaffected the way to ad-
dress the static registers. The way to address the
“dynamic”page is to set the DRBR as describedin
Table 5(e.g.to selectEEPROMpage 0,the DRBR
has to be loaded with content 01h, see Data
RAM/EEPROM/OSD RAM addressing for addi-
tional information).Bits0, 1 and 7of the DRBR are
dedicated tothe EEPROM.
The EEPROM pages do not require dedicated in-
structions to be accessedin readingor writing. The
EEPROM is controlled by the EEPROM Control
Register (EECR=EAh). Any EEPROM location can
be readjustlikeanyotherdatalocation,alsoin terms
of accesstime.
To write an EEPROM location takes an average
time of 5 ms (10ms max) and during this time the
EEPROM is not accessible by the Core. A busy
flag canbe readbythe Coreto knowthe EEPROM
status before trying any access. In writing the
EEPROM can work in two modes: Byte Mode
(BMODE) and Parallel Mode (PMODE). The
BMODE is the normal way to use the EEPROM
and consistsin accessing one byte at a time. The
PMODE consists inaccessing 8 bytesper time.
EECR
EEPROM Control Register
(EAh, Read/Write)
D7 D6 D5 D4 D3 D2 D1 D0
EN = EEPROMEnable Bit
BS =EEPROM Busy Bit
PE =Parallel Mode Enable Bit
PS =Parallel Start Bit
Reserved (Mustbe set Low)
Reserved (Mustbe set Low)
SB =Stand-by Enable Bit
Unused
Figure19. EEPROM Control Register
D7.
Not used
SB.
WRITE ONLY
.
Ifthis bit is set theEEPROM is
disabled(anyaccesswill bemeaningless)and the
power consumption of the EEPROMis reduced to
the leakage values.
D5, D4.
Reserved for testingpurposes, they must
be setto zero.
PS.
SETONLY
.
Oncein Parallel Mode,assoonas
the usersoftwaresetsthe PSbitthe parallelwriting
of the8adjacent registerswill start.PSis internally
reset at the end of the programming procedure.
Note that less than 8 bytes can be written; after
parallel programming the remaining undefined
bytes will haveno particular content.
PE.
WRITE ONLY
.
This bit must be set by the
user programin orderto performparallelprogram-
ming (more bytes per time). If PE is set and the
“parallelstartbit”(PS)is low,upto 8adjacentbytes
can be writtenat the maximumspeed, the content
being storedin volatile registers.These 8 adjacent
bytes can be considered as row, whose A7, A6,
A5, A4, A3 are fixed while A2, A1 and A0 are the
changing bytes. PE is automatically reset at the
end of any parallel programming procedure. PE
can be reset by the user software before starting
the programming procedure, leaving unchanged
the EEPROM registers.
BS.
READ ONLY
.
This bitwill be automaticallyset
by the CORE when the user program modifies an
EEPROMregister. The user program has to test it
before any read or write EEPROM operation; any
attemptto access the EEPROMwhile “busy bit” is
setwill beabortedandthewriting procedureinpro-
gress completed.
EN
. WRITE ONLY. This bit MUSTbe setto one in
order to write any EEPROM register. If the user
program will attempt to write the EEPROM when
EN= “0” the involved registers will be unaffected
and the “busy bit”will not be set.
AfterRESETthecontentofEECRregisterwillbe00h.
Notes :
When the EEPROM is busy (BS=“1”) the EECR
can notbe accessed inwrite mode, itis onlypossi-
ble to read BS status.This implies that as long as
the EEPROM is busy it is not possible to change
the status of the EEPROMcontrol register. EECR
bits 4 and 5 are reserved for test purposes, and
must never be setto “1”.
ST6391,92,93,95,97,99
16/64
相關(guān)PDF資料
PDF描述
ST6391B1 MOSFET; Transistor Polarity:Dual N Channel; Continuous Drain Current, Id:2.6A; On-Resistance, Rds(on):0.18ohm; Package/Case:8-SOIC; Leaded Process Compatible:No; Mounting Type:surface mount; Peak Reflow Compatible (260 C):No
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