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參數資料
| 型號： | STB20NE06T4 |
| 英文描述： | 0.5A HOLD,1.0A TRIP,60V |
| 中文描述： | 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 20A條（?。﹟對263AB |
| 文件頁數： | 8/8頁 |
| 文件大小： | 84K |
| 代理商： | STB20NE06T4 |
STB20NE06L
8/8
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相關PDF資料 |
PDF描述 |
|---|---|
| STB20NE06 | N - CHANNEL 60V - 0.06ohm - 20A D2PAK STripFET] POWER MOSFET |
| STB20NM60 | N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET |
| STB20NM60-1 | N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET |
| STB20NM60T4 | N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET |
| STB20NM50T4 | N-CHANNEL 500V - 0.20ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| STB20NF06L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 60V - 0.06ヘ - 20A - D2PAK/TO-220/TO-220FP STripFET⑩ II Power MOSFET |
| STB20NF06LT4 | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB20NK50Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 500V -0.23 OHM - 17A TO-220/D2PAK/I2SPAK/TO-247 |
| STB20NK50Z_09 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 500 V, 0.23 Ω, 17 A SuperMESH? Power MOSFET Zener-protected TO-220, TO-247, TO-220FP, D2PAK |
| STB20NK50Z-S | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 500V -0.23 OHM - 17A TO-220/D2PAK/I2SPAK/TO-247 |
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