- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄372360 > STB36NF06L FUSE,1.5A,RESETTABLE,SMDC150 PDF資料下載
參數(shù)資料
| 型號： | STB36NF06L |
| 英文描述： | FUSE,1.5A,RESETTABLE,SMDC150 |
| 中文描述： | N溝道60V的- 0.032歐姆- 30A條D2PAK/TO-220 STRIPFET二功率MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 205K |
| 代理商： | STB36NF06L |
1/8
PRELIMINARY DATA
June 2003
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STB36NF06L
STP36NF06L
N-CHANNEL 60V - 0.032
- 30A D2PAK/TO-220
STripFET II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.032
I
EXCEPTIONAL dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
APPLICATION ORIENTED
CHARACTERIZATION
I
SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps
therefore
a
remarkable
reproducibility.
manufacturing
APPLICATIONS
I
POWER TOOLS
I
AUTOMOTIVE ENVIRONMENT
TYPE
V
DSS
R
DS(on)
I
D
STB36NF06L
STP36NF06L
60 V
60 V
< 0.040
< 0.040
30 A
30 A
1
2
3
TO-220
1
3
D
2
PAK
TO-263
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STB36NF06L
STP36NF06L
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt
(1)
Peak Diode Recovery voltage slope
E
AS(2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(
)
Pulse width limited by safe operating area.
(1) I
SD
≤
30A, di/dt
≤
200A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 15A, V
DD
= 30V
MARKING
STB36NF06L
STP36NF06L
PACKAGE
TO-263
TO-220
PACKAGING
TAPE & REEL
TUBE
Parameter
Value
60
60
± 18
30
21
120
70
0.47
10
235
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STP3N100XI | TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 1.6A I(D) | SOT-186VAR |
| STP3N50XI | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 1.7A I(D) | SOT-186VAR |
| STP3N60FI | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 2.7A I(D) | TO-220VAR |
| STP3N60XI | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 2.4A I(D) | SOT-186VAR |
| STP3N80XI | TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 1.7A I(D) | SOT-186VAR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB36NF06LT4 | 功能描述:MOSFET 60V 0.032Ohm 30A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB36NM60N | 功能描述:MOSFET N-Ch 600V 0.092Ohm 29A MDMesh II MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB36NM60ND | 制造商:STMicroelectronics 功能描述:POWER MOSFET - Tape and Reel |
| STB37N60DM2AG | 功能描述:MOSFET N-CH 600V 28A 制造商:stmicroelectronics 系列:汽車級，AEC-Q101，MDmesh? 包裝:剪切帶（CT） 零件狀態(tài):有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標(biāo)準(zhǔn) 漏源極電壓（Vdss）:600V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:28A（Tc） 不同?Id，Vgs 時(shí)的?Rds On（最大值）:110 毫歐 @ 14A，10V 不同 Id 時(shí)的 Vgs（th）（最大值）:5V @ 250μA 不同 Vgs 時(shí)的柵極電荷（Qg）:54nC @ 10V 不同 Vds 時(shí)的輸入電容（Ciss）:2400pF @ 100V 功率 - 最大值:210W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-263-3，D2Pak（2 引線+接片），TO-263AB 供應(yīng)商器件封裝:D2PAK 標(biāo)準(zhǔn)包裝:1 |
| STB38N65M5 | 功能描述:MOSFET N-Ch 650V 0.076 Ohm 30 A MDmesh V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。