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參數(shù)資料
| 型號： | STB45NF06 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 60V - 0.022ohm - 38A D2PAK STripFET⑩ POWER MOSFET |
| 中文描述： | N溝道60V的- 0.022ohm - 38A條采用D2PAK STripFET⑩功率MOSFET |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 155K |
| 代理商： | STB45NF06 |
STB45NF06L
2/9
THERMAL DATA
Rthj-case
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
°
C, I
D
= I
AR
, V
DD
= 50 V)
ELECTRICAL CHARACTERISTICS
(TCASE = 25
°
C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
ON (1)
Symbol
V
GS(th)
DYNAMIC
Symbol
g
fs
(1)
C
iss
C
oss
Thermal Resistance Junction-case Max
1.87
°
C/W
°
C/W
°
C
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
T
l
Maximum Lead Temperature For Soldering Purpose
300
Parameter
Max Value
38
Unit
A
135
mJ
Test Conditions
I
D
= 250
μ
A, V
GS
= 0
Min.
60
Typ.
Max.
Unit
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125
°
C
V
GS
=
±
16V
1
μ
A
μ
A
nA
10
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
±
100
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 5 V,I
D
= 19 A
V
GS
= 10V, I
D
= 19 A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
1
1.7
2.5
V
R
DS(on)
Static Drain-source On
Resistance
0.024
0.03
0.022
0.028
Parameter
Test Conditions
V
DS
=15V
,
I
D
=19 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
24
Max.
Unit
S
Forward Transconductance
Input Capacitance
1600
pF
Output Capacitance
217
pF
C
rss
Reverse Transfer
Capacitance
62
pF
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB45NF06_10 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 60 V, 0.023 Ω, 38 A TO-220, D2PAK STripFETTM II Power MOSFET |
| STB45NF06L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 60V - 0.022ohm - 38A TO-220 / D2PAK STripFET⑩ II POWER MOSFET |
| STB45NF06LT4 | 功能描述:MOSFET N-Ch 60 Volt 38 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB45NF06T4 | 功能描述:MOSFET N-Ch, 60V-0.022ohms 38A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB45NF3LL | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.014ohm - 45A TO-220 - TO220FP - D2PAK STripFET II⑩ POWER MOSFET |
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