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參數(shù)資料
| 型號： | STB45NF06 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 60V - 0.022ohm - 38A D2PAK STripFET⑩ POWER MOSFET |
| 中文描述： | N溝道60V的- 0.022ohm - 38A條采用D2PAK STripFET⑩功率MOSFET |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 155K |
| 代理商： | STB45NF06 |
3/9
STB45NF06L
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
t
d(on)
Turn-on Delay Time
SWITCHING OFF
Symbol
t
d(off)
t
f
SOURCE DRAIN DIODE
Symbol
I
SD
Note: 1. Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Test Conditions
V
DD
= 30V, I
D
= 19A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
Min.
Typ.
30
Max.
Unit
ns
t
r
Rise Time
105
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 48V, I
D
= 38A,
V
GS
= 5V
23
7
10
31
nC
nC
nC
Parameter
Test Conditions
V
DD
= 30V, I
D
= 19A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 3)
Min.
Typ.
65
25
Max.
Unit
ns
ns
Turn-off-Delay Time
Fall Time
t
d(off)
Off-voltage Rise Time
Vclamp =48V,I
D
=38A
R
G
= 4.7
,
V
GS
= 10V
50
ns
t
f
Fall Time
(see test circuit, Figure 5)
55
ns
t
c
Cross-over Time
85
ns
Parameter
Test Conditions
Min.
Typ.
Max.
38
Unit
A
Source-drain Current
I
SDM
(1)
Source-drain Current (pulsed)
152
A
V
SD
(2)
Forward On Voltage
I
SD
= 38A, V
GS
= 0
I
SD
= 38A, di/dt = 100A/
μ
s,
V
DD
= 100V, T
j
= 150
°
C
(see test circuit, Figure 5)
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
70
110
4
ns
nC
A
Thermal Impedence
Safe Operating Area
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB45NF06_10 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 60 V, 0.023 Ω, 38 A TO-220, D2PAK STripFETTM II Power MOSFET |
| STB45NF06L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 60V - 0.022ohm - 38A TO-220 / D2PAK STripFET⑩ II POWER MOSFET |
| STB45NF06LT4 | 功能描述:MOSFET N-Ch 60 Volt 38 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB45NF06T4 | 功能描述:MOSFET N-Ch, 60V-0.022ohms 38A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB45NF3LL | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.014ohm - 45A TO-220 - TO220FP - D2PAK STripFET II⑩ POWER MOSFET |
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