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參數(shù)資料
| 型號： | STB5NA80-1 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4.7A I(D) | TO-262AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 800V的五（巴西）直| 4.7AI（四）|對262AA |
| 文件頁數(shù)： | 10/10頁 |
| 文件大小： | 126K |
| 代理商： | STB5NA80-1 |
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consequences of use ofsuch informationnor forany infringement of patents or other rights of third parties which may results from its use. No
license is granted byimplication orotherwise under any patentorpatentrightsof SGS-THOMSONMicroelectronics. Specifications mentioned
in this publicationare subjectto change withoutnotice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsarenotauthorized for use as criticalcomponents in lifesupportdevices or systems withoutexpress
writtenapprovalof SGS-THOMSON Microelectonics.
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. . .
STB5NA50
10/10
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| STB5NB60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 600V - 1.8ohm - 5A - I2PAK/D2PAK PowerMESH MOSFET |
| STB5NB60-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5A I(D) | TO-251AA |
| STB5NB60T4 | 功能描述:MOSFET N-Ch 600 Volt 5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB5NB80 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 800V - 1.8ohm - 5A -D2PAK PowerMESH] MOSFET |
| STB5NB80T4 | 功能描述:MOSFET N-CH 800V 5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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