參數(shù)資料
型號(hào)： STB60NF06LT4
英文描述： DIODE 1N6284A BI DIR
中文描述： 晶體管| MOSFET的| N溝道| 60V的五（巴西）直|第60A條（?。﹟對(duì)263AB
文件頁(yè)數(shù)： 1/9頁(yè)
文件大?。?/td> 143K
代理商： STB60NF06LT4
1/9
March 2002
.
STB60NE06-16
N-CHANNEL 60V - 0.013
- 60A D
2
PAK
STripFET
II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.013
I
EXCEPTIONAL dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
LOW GATE CHARGE 100
o
C
I
HIGH dv/dt CAPABILITY
I
APPLICATION ORIENTED
CHARACTERIZATION
I
FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique ”Single Feature Size
”
strip-based
process.
The
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
resulting
transistor
APPLICATIONS
I
DC MOTOR CONTROL
I
DC-DC & DC-AC CONVERTERS
I
SYNCHRONOUS RECTIFICATION
TYPE
V
DSS
R
DS(on)
I
D
STB60NE06-16
60 V
<0.016
60 A
1
3
D
2
PAK
TO-263
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25
°
C
I
D
Drain Current (continuous) at T
C
= 100
°
C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25
°
C
Derating Factor
dv/dt
(1)
Peak Diode Recovery voltage slope
E
AS
(2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(
)
Pulse width limitedby safe operating area.
(1) I
SD
≤
60A, di/dt
≤
200A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 60A, V
DD
= 25V
Parameter
Value
60
60
±
20
60
42
240
Unit
V
V
V
A
A
A
150
1
11
W
W/
°
C
V/ns
400
mJ
-55 to 175
°
C
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB60NF06T4 功能描述:MOSFET N-Ch 60 Volt 60 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB60NF10 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 100V - 0.019Ω - 80A - TO-220 - D2PAK - I2PAK STripFET? II Power MOSFET
STB60NF10_06 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 100V - 0.019Ω - 80A - TO-220 - D2PAK - I2PAK STripFET? II Power MOSFET
STB60NF10-1 功能描述:MOSFET N Ch 100V 0.019Ohm 80A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB60NF10T4 功能描述:MOSFET N Ch 100V 0.019Ohm 80A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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