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參數(shù)資料
| 型號： | STB60NE03L-10T4 |
| 英文描述： | DIODE TVS 10V 1.5KW BI-DIR |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直|第60A條（?。﹟對263AB |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 143K |
| 代理商： | STB60NE03L-10T4 |
1/9
March 2002
.
STB60NE06-16
N-CHANNEL 60V - 0.013
- 60A D
2
PAK
STripFET
II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.013
I
EXCEPTIONAL dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
LOW GATE CHARGE 100
o
C
I
HIGH dv/dt CAPABILITY
I
APPLICATION ORIENTED
CHARACTERIZATION
I
FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique ”Single Feature Size
”
strip-based
process.
The
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
resulting
transistor
APPLICATIONS
I
DC MOTOR CONTROL
I
DC-DC & DC-AC CONVERTERS
I
SYNCHRONOUS RECTIFICATION
TYPE
V
DSS
R
DS(on)
I
D
STB60NE06-16
60 V
<0.016
60 A
1
3
D
2
PAK
TO-263
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25
°
C
I
D
Drain Current (continuous) at T
C
= 100
°
C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25
°
C
Derating Factor
dv/dt
(1)
Peak Diode Recovery voltage slope
E
AS
(2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(
)
Pulse width limitedby safe operating area.
(1) I
SD
≤
60A, di/dt
≤
200A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 60A, V
DD
= 25V
Parameter
Value
60
60
±
20
60
42
240
Unit
V
V
V
A
A
A
150
1
11
W
W/
°
C
V/ns
400
mJ
-55 to 175
°
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STB60NE03L-12T4 | TVS Diode; Diode Type:Unidirectional TVS; Stand-Off Voltage, VRWM:15.3V; Breakdown Voltage, Vbr:17.1V; Package/Case:DO-201; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Current IPP @ 10x1000uS:60.3A RoHS Compliant: Yes |
| STB60NF06 | N-CHANNEL 60V - 0.014ohm - 60A D2PAK STripFET⑩ POWER MOSFET |
| STB60NF10 | N-CHANNEL 100V - 0.019ohm - 80A D2PAK/TO-220 STripFET II POWER MOSFET |
| STB60NF10T4 | N-CHANNEL 100V - 0.019ohm - 80A D2PAK/TO-220 STripFET II POWER MOSFET |
| STB6LNC60T4 | TVS Diode; Leaded Process Compatible:Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB60NE03L-12 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 30V - 0.009 OHM - 60A - D2PAK SINGLE FEATURE SIZE POWER MOSFET |
| STB60NE03L-12T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 60A I(D) | TO-263AB |
| STB60NE06-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET |
| STB60NE06-16 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET |
| STB60NE06-16T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 60A I(D) | TO-263AB |
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