參數(shù)資料
型號(hào)： STB60NF10T4
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 100V - 0.019ohm - 80A D2PAK/TO-220 STripFET II POWER MOSFET
中文描述： N溝道100V的- 0.019ohm - 80A條D2PAK/TO-220 STripFET二功率MOSFET
文件頁數(shù)： 3/9頁
文件大?。?/td> 143K
代理商： STB60NF10T4
3/9
STB60NE06-16
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300
μ
s,duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 30 V
R
G
= 4.7
(Resistive Load, Figure 3)
I
D
= 30 A
V
GS
= 10 V
40
125
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 48V I
D
= 60A V
GS
= 10V
115
25
40
160
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-Voltage Rise Time
Fall Time
Cross-over Time
V
clamp
= 48 V
R
G
= 4.7
(Inductive Load, Figure 5)
I
D
= 60 A
V
GS
= 10 V
15
150
180
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
60
240
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 60 A
V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 60 A
V
DD
= 30 V
(see test circuit, Figure 5)
di/dt = 100A/
μ
s
T
j
= 150
°
C
100
0.4
8
ns
μ
C
A
Thermal Impedance
ELECTRICAL CHARACTERISTICS
(continued)
Safe Operating Area
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