參數(shù)資料
型號(hào): STB6NA60-1
英文描述: 82V, 1.5KW TRANZORB, 1.5 KE82A, IN6293A
中文描述: 晶體管| MOSFET的| N溝道| 600V的五(巴西)直| 6.5AI(四)|對(duì)262VAR
文件頁(yè)數(shù): 5/10頁(yè)
文件大?。?/td> 130K
代理商: STB6NA60-1
CapacitanceVariations
Normalized On Resistance vs Temperature
Turn-offDrain-source Voltage Slope
Normalized Gate ThresholdVoltage vs
Temperature
Turn-on Current Slope
Cross-over Time
STB6NA60
5/10
相關(guān)PDF資料
PDF描述
STB6NA60T4 Resettable Fuse; Operating Voltage Max:30VDC; Resistance:2.9ohm; Holding Current:0.2A; Tripping Current:0.4A; Fuse Terminals:SMT Caps; Initial Resistance Min:0.8ohm; Interrupting Current Max:100A; Leaded Process Compatible:Yes
STB6NA80-1 TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-262VAR
STB6NA80T4 TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-263AB
STB6NC60T4 Resettable Fuse; Operating Voltage Max:6V; Holding Current:1.5uA; Tripping Current:3uA; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Steady State Current Max:40A; Voltage Rating:6V
STB6NC90ZT4 TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 5.4A I(D) | TO-252AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB6NA60T4 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6.5A I(D) | TO-263AB
STB6NA80 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STB6NA80-1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-262VAR
STB6NA80T4 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-263AB
STB6NB50 功能描述:MOSFET N-Ch 500 Volt 6 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube