參數(shù)資料
型號(hào)： STB6NC90ZT4
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 5.4A I(D) | TO-252AA
中文描述： 晶體管| MOSFET的| N溝道| 900V五（巴西）直| 5.4AI（四）|對(duì)252AA
文件頁(yè)數(shù)： 1/10頁(yè)
文件大小： 130K
代理商： STB6NC90ZT4
STB6NA60
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPICALR
DS(on)
= 1
±
30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHETESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGESPREAD
THROUGH-HOLE I2PAK (TO-262) POWER
PACKAGE IN TUBE(SUFFIX ”-1”)
SURFACE-MOUNTING D2PACK (TO-263)
POWERPACKAGE IN TUBE(NO SUFFIX)
OR IN TAPE & REEL (SUFFIX ”T4”)
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCHMODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
600
V
V
DGR
600
V
V
GS
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
±
30
6.5
V
I
D
I
D
A
4.3
A
I
DM
(
)
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
26
A
P
tot
125
W
Derating Factor
1
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulsewidth limitedby safe operating area
150
TYPE
V
DSS
R
DS(on)
< 1.2
I
D
STB6NA60
600 V
6.5 A
October1995
123
1
3
I2PAK
TO-262
D2PAK
TO-263
1/10
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB6NK60Z 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET
STB6NK60Z_0711 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600 V - 1 ヘ - 6 A - TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH⑩ Power MOSFET
STB6NK60Z-1 功能描述:MOSFET N-Ch, 600V-1ohm Zener SuperMESH 6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB6NK60ZT4 功能描述:MOSFET N-Ch 600 Volt 6 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB6NK90Z 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 900V - 1.56Ω - 5.8A - TO-220/TO-220FP/D2PAK/TO-247 Zener-protected SuperMESH? Power MOSFET
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