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參數(shù)資料
| 型號： | STB70NF02LT4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 70A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 20V的五（巴西）直| 70A條（?。﹟對263AB |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 155K |
| 代理商： | STB70NF02LT4 |
STB70NFS03L
2/9
THERMAL DATA
Rthj-case
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
°
C, I
D
= I
AR
, V
DD
= 50 V)
ELECTRICAL CHARACTERISTICS
(TCASE = 25
°
C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
ON (1)
Symbol
V
GS(th)
R
DS(on)
DYNAMIC
Symbol
g
fs
(1)
C
iss
C
oss
Thermal Resistance Junction-case Max
1.5
°
C/W
°
C/W
°
C
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
T
l
Maximum Lead Temperature For Soldering Purpose
300
Parameter
Max Value
35
Unit
A
450
mJ
Test Conditions
I
D
= 250
μ
A, V
GS
= 0
Min.
30
Typ.
Max.
Unit
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125
°
C
V
GS
=
±
20V
1
μ
A
μ
A
nA
10
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
±
100
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 10V, I
D
= 35 A
V
GS
= 5V,I
D
= 18 A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
1
V
Static Drain-source On
Resistance
0.008
0.01
0.015
0.018
Parameter
Test Conditions
V
DS
= 25V
,
I
D
= 35 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
40
Max.
Unit
S
Forward Transconductance
Input Capacitance
1470
pF
Output Capacitance
490
pF
C
rss
Reverse Transfer
Capacitance
110
pF
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB70NF03L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.0075ohm - 70A - D2PAK - I2PAK - TO-220 Low gate charge STripFET TM II Power MOSFET |
| STB70NF03L_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.0075ohm - 70A - D2PAK - I2PAK - TO-220 Low gate charge STripFET TM II Power MOSFET |
| STB70NF03L-1 | 制造商:STMicroelectronics 功能描述: 制造商:STMicroelectronics 功能描述:MOSFET N-CH 30V 70A I2PAK |
| STB70NF03LT4 | 功能描述:MOSFET N-Ch 30 Volt 70 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB70NF3 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.008 ohm - 70A D2PAK LOW GATE CHARGE STripFET POWER MOSFET |
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