- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄372326 > STB70NFS03LT4 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 70A I(D) | TO-263AB PDF資料下載
參數(shù)資料
| 型號： | STB70NFS03LT4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 70A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 70A條（?。﹟對263AB |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 155K |
| 代理商： | STB70NFS03LT4 |
3/9
STB70NFS03L
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
t
d(on)
Turn-on Delay Time
SWITCHING OFF
Symbol
t
d(off)
t
f
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(1)
V
SD
(2)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Test Conditions
V
DD
= 15V, I
D
= 35A
R
G
= 4.7
V
GS
= 4.5V
(see test circuit, Figure 3)
Min.
Typ.
20
Max.
Unit
ns
t
r
Rise Time
350
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 24V, I
D
= 46A,
V
GS
= 10V
35
5
10
45
nC
nC
nC
Parameter
Test Conditions
V
DD
= 15V, I
D
= 35A,
R
G
= 4.7
,
V
GS
= 4.5V
(see test circuit, Figure 3)
Min.
Typ.
35
65
Max.
Unit
ns
ns
Turn-off-Delay Time
Fall Time
Parameter
Test Conditions
Min.
Typ.
Max.
70
Unit
A
Source-drain Current
Source-drain Current (pulsed)
280
A
Forward On Voltage
I
SD
= 70A, V
GS
= 0
I
SD
= 70A, di/dt = 100A/
μ
s,
V
DD
= 20V, T
j
= 150
°
C
(see test circuit, Figure 5)
1.5
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
75
110
2.9
ns
nC
A
Safe Operating Area
Thermal Impedence
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STB70NH03L | N-CHANNEL 30V - 0.0075 OHM - 60A D2PAK STRIPFET III POWER MOSFET FOR DC-DC CONVERSION |
| STB70NF02LT4 | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 70A I(D) | TO-263AB |
| STB70NF03LT4 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 70A I(D) | TO-263AB |
| STB70NF3 | N-CHANNEL 30V - 0.008 ohm - 70A D2PAK LOW GATE CHARGE STripFET POWER MOSFET |
| STB75NE75T4 | TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 75A I(D) | TO-263AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB70NH03L | 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 30V 60A D2PAK |
| STB70NH03LT4 | 功能描述:MOSFET N-Ch 30 Volt 60 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB7100 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Low-cost set-top box decoder chip for MPEG-4 AVC and HD MPEG-2 |
| STB7101 | 制造商:STMicroelectronics 功能描述:RF AMP CHIP SGL PWR AMP 1.9GHZ 3.3V 6PIN SOT-323 - Bulk |
| STB7101TR | 制造商:STMicroelectronics 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。