參數(shù)資料
型號(hào): STB80NF55L06T4
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 80A I(D) | TO-263AB
中文描述: 晶體管| MOSFET的| N溝道| 55V的五(巴西)直| 80A條(?。﹟對(duì)263AB
文件頁(yè)數(shù): 2/9頁(yè)
文件大?。?/td> 339K
代理商: STB80NF55L06T4
STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1
2/9
THERMAL DATA
Rthj-case
Rthj-amb
T
l
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
ON (1)
Symbol
V
GS(th)
R
DS(on)
DYNAMIC
Symbol
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
0.5
62.5
°C/W
°C/W
Maximum Lead Temperature For Soldering Purpose
300
°C
Min.
55
Typ.
Max.
Unit
V
I
D
= 250 μA, V
GS
= 0
V
DS
= Max Rating
1
μA
10
μA
V
GS
= ± 16V
±100
nA
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10 V, I
D
= 40 A
V
GS
= 5 V, I
D
= 40 A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
1
1.6
2.5
V
Static Drain-source On
Resistance
0.0065
0.008
0.008
0.01
Parameter
Test Conditions
V
DS
=15V
,
I
D
=40 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
Max.
Unit
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
150
S
Input Capacitance
4350
pF
Output Capacitance
800
pF
Reverse Transfer
Capacitance
260
pF
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB80NF55L-06T4 功能描述:MOSFET N-Ch, 55V-0.005ohms 80A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB80NF55L-08 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 55V - 0.0065ohm - 80A - TO-220/D2PAK STripFET⑩ II POWER MOSFET
STB80NF55L-08-1 功能描述:MOSFET N-Ch, 55V-0.0065ohms 80A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB80NF55L-08T4 功能描述:MOSFET N-Ch 55 Volt 80 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB80NF75L 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 75V - 0.008 ohm - 80A TO-220/D2PAK/I2PAK STripFET⑩ II POWER MOSFET