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參數(shù)資料
| 型號： | STB9NK60Z-1 |
| 廠商： | 意法半導體 |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 連接器附件 |
| 文件頁數(shù)： | 2/13頁 |
| 文件大小： | 581K |
| 代理商： | STB9NK60Z-1 |
STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1
2/13
ABSOLUTE MAXIMUM RATINGS
Symbol
(
l
) Pulse width limited by safe operating area
(1) I
SD
≤
7A, di/dt
≤
200
μ
A, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
Parameter
Value
Unit
TO-220 /
D
2
PAK / I
2
PAK
TO-220FP
V
DS
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
Gate- source Voltage
600
V
V
DGR
600
V
V
GS
I
D
I
D
I
DM
(
l
)
P
TOT
± 30
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
7
7 (*)
A
4.4
4.4 (*)
A
Drain Current (pulsed)
28
28 (*)
A
Total Dissipation at T
C
= 25°C
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K
)
Peak Diode Recovery voltage slope
125
30
W
1
0.24
W/°C
V
ESD(G-S)
dv/dt (1)
V
ISO
T
j
T
stg
4000
V
4.5
V/ns
Insulation Withstand Voltage (DC)
-
2500
V
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150
°C
°C
TO-220
I
2
PAK
D
2
PAK
TO-
220FP
Rthj-case
Thermal Resistance Junction-case Max
Thermal Resistance Junction-pcb Max
(When mounted on minimum Footprint)
Thermal Resistance Junction-ambient Max
1
4.16
°C/W
Rthj-pcb
30
°C/W
Rthj-amb
T
l
62.5
300
°C/W
°C
Maximum Lead Temperature For Soldering Purpose
Parameter
Max Value
7
Unit
A
235
mJ
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| STB9NK60ZD | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 0.85? - 7A TO-220/TO-220FP/DPAK SuperFREDMesh MOSFET |
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| STB9NK60ZD_08 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600 V - 0.85 ヘ - 7 A - D2PAK, TO-220FP, TO-220 SuperFREDMesh⑩ Power MOSFET |
| STB9NK60ZDT4 | 功能描述:MOSFET N-Ch 600 Volt 7 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB9NK60ZFD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 600V 0.85 OHM 7A TO-220/TO-220FP/D2PAK FAST DIODE SUPERMESH POWER MOSFET |
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