- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄358423 > STD12N05L (意法半導體) N-Channel Enhancement Mode Low Threshold Power MOS Transistor(N溝道增強模式低閾值功率MOSFET) PDF資料下載
參數(shù)資料
| 型號： | STD12N05L |
| 廠商： | 意法半導體 |
| 英文描述： | N-Channel Enhancement Mode Low Threshold Power MOS Transistor(N溝道增強模式低閾值功率MOSFET) |
| 中文描述： | N溝道增強模式的低閾值功率MOS晶體管（不適用溝道增強模式低閾值功率MOSFET的） |
| 文件頁數(shù)： | 10/10頁 |
| 文件大?。?/td> | 175K |
| 代理商： | STD12N05L |
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patentor patentrights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication aresubject to change withoutnotice. Thispublication supersedes and replacesall information previously supplied.
SGS-THOMSONMicroelectronics products are notauthorized for use ascriticalcomponents in lifesupport devices or systems withoutexpress
writtenapproval ofSGS-THOMSONMicroelectonics.
1996 SGS-THOMSONMicroelectronics -Printedin Italy- All Rights Reserved
SGS-THOMSONMicroelectronics GROUP OF COMPANIES
Australia - Brazil -Canada -China - France- Germany - HongKong - Italy - Japan- Korea-Malaysia - Malta- Morocco - TheNetherlands -
Singapore - Spain- Sweden- Switzerland -Taiwan - Thailand- UnitedKingdom - U.S.A
.
STD12N05L/STD12N06L
10/10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STF-H303UWW | T-1 SINGLE COLOR LED, ULTRA WHITE, 3 mm |
| STF202-22T1 | USB Filter with ESD Protection |
| STI728107D1-70VGR | 8M X 72 EDO DRAM MODULE, 70 ns, DMA168 |
| STI728107D1-70VGU | 8M X 72 EDO DRAM MODULE, 70 ns, DMA168 |
| STPCG1MBRD | INTERCONNECTION DEVICE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD12N05L-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 12A I(D) | TO-251 |
| STD12N05LT4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 12A I(D) | TO-252 |
| STD12N05T4 | 功能描述:MOSFET N-Ch 50 Volt 12 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD12N06 | 功能描述:MOSFET TO-251 N-CH 60V 12A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD12N06-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-251 |
發(fā)布緊急采購，3分鐘左右您將得到回復。