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參數(shù)資料
| 型號(hào)： | STD55NH2LL |
| 英文描述： | N-CHANNEL 24V - 0.008 OHM - 55A DPAK/IPAK ULTRA LOW GATE CHARGE STRIPFET POWER MOSFET |
| 中文描述： | N溝道24V的- 0.008歐姆- 55A條的DPAK /像是iPak超低柵極電荷STRIPFET功率MOSFET |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 345K |
| 代理商： | STD55NH2LL |
1/10
TARGET DATA
September 2003
This is preliminary information on a new product forseen to be developped. Details are subject to change without notice
STD55NH2LL
N-CHANNEL 24V - 0.008
- 55A DPAK/IPAK
ULTRA LOW GATE CHARGE STripFET POWER MOSFET
I
TYPICAL R
DS
(on) = 0.008
@ 10 V
I
TYPICAL R
DS
(on) = 0.011
@ 4.5 V
I
R
DS(ON)
* Qg INDUSTRY’s BENCHMARK
I
CONDUCTION LOSSES REDUCED
I
SWITCHING LOSSES REDUCED
I
LOW THRESHOLD DEVICE
I
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
I
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
The STD55NH2LL is based on the latest generation of
ST's proprietary STripFET technology. An innovative
layout enables the device to also exhibit extremely low
gate charge for the most demanding requirements as
high-side switch in high-frequency DC-DC converters. It's
therefore ideal for high-density converters in Telecom
and Computer applications.
APPLICATIONS
I
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
TYPE
V
DSS
R
DS(on)
I
D
STD55NH2LL
24 V
< 0.010
55 A
3
2
1
1
3
IPAK
TO-251
(Suffix “-1”)
DPAK
TO-252
(Suffix “T4”)
Ordering Information
SALES TYPE
STD55NH2LLT4
STD55NH2LL-1
ABSOLUTE MAXIMUM RATINGS
Symbol
V
spike(1)
Drain-source Voltage Rating
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM(2)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
E
AS(3)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Operating Junction Temperature
MARKING
D55NH2LL
D55NH2LL
PACKAGE
TO-252
TO-251
PACKAGING
TAPE & REEL
TUBE
Parameter
Value
30
24
24
± 18
55
39
220
60
0.4
TBD
Unit
V
V
V
V
A
A
A
W
W/°C
mJ
-55 to 175
°C
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STD5N20T4 | Cartridge Fuse; Current Rating:100mA; Voltage Rating:250V; Fuse Type:Fast Acting; Fuse Size/Group:5 x 20 mm; Body Material:Glass; Diameter:5.2mm; Fuse Terminals:Ferrule; Length:20mm; Series:235XE |
| STD5NB20T4 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-252AA |
| STD5NM50T4 | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-252AA |
| STD5NM60T4 | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5A I(D) | TO-252AA |
| STD5NB30T4 | TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 5A I(D) | TO-252AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD55NH2LL_06 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-channel 24V - 0.010ohm - 40A - DPAK/IPAK Ultra low gate charge STripFET TM Power MOSFET |
| STD55NH2LL-1 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-CHANNEL 24V - 0.010ohm - 40A DPAK/IPAK ULTRA LOW GATE CHARGE STripFET POWER MOSFET |
| STD55NH2LLT4 | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD560BLK | 功能描述:LED 安裝硬件 .2" DIA. .56" BLACK RoHS:否 制造商:Bivar 產(chǎn)品:LED Mounting Clips LED 大小:5 mm 材料:Nylon 顏色:Black 主體長(zhǎng)度:4.4 mm 面板厚度尺寸: 封裝:Bulk |
| STD570BLK | 功能描述:LED 安裝硬件 .2" DIA. .57" BLACK RoHS:否 制造商:Bivar 產(chǎn)品:LED Mounting Clips LED 大小:5 mm 材料:Nylon 顏色:Black 主體長(zhǎng)度:4.4 mm 面板厚度尺寸: 封裝:Bulk |
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