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參數(shù)資料
| 型號(hào)： | STE24NA100 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL 1000V - 0.35ohm - 24A - ISOTOP FAST POWER MOSFET |
| 中文描述： | ? -頻道1000V - 0.35ohm - 24A條- 1000V的集電極FAST的功率MOSFET |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 92K |
| 代理商： | STE24NA100 |
THERMAL DATA
R
thj-case
R
thc-h
Thermal Resistance Junction-case
Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
Max
0.27
0.05
o
C/W
o
C/W
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
12
A
E
AS
2000
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwisespecified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
D
= 500
μ
A
V
GS
= 0
1000
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating
V
GS
=
±
30 V
T
c
= 125
o
C
50
250
μ
A
μ
A
nA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
±
400
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage V
DS
= V
GS
Static Drain-source On
Resistance
On State Drain Current
I
D
= 1 mA
I
D
= 12 A
2.25
3
3.75
V
V
GS
= 10 V
0.35
0.385
I
D(on)
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
24
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 12 A
15
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
14000
1200
300
19000
1600
390
pF
pF
pF
STE24NA100
2/8
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