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參數(shù)資料
| 型號： | STE24NA100 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL 1000V - 0.35ohm - 24A - ISOTOP FAST POWER MOSFET |
| 中文描述： | ? -頻道1000V - 0.35ohm - 24A條- 1000V的集電極FAST的功率MOSFET |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 92K |
| 代理商： | STE24NA100 |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 500 V
R
G
= 4.7
(see test circuit, figure 3)
V
DD
= 800 V I
D
= 24 A V
GS
= 10 V
I
D
= 12 A
V
GS
= 10 V
40
55
56
77
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
470
43
226
660
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 800 V
R
G
= 4.7
(see test circuit, figure 5)
I
D
= 24 A
V
GS
= 10 V
110
25
150
154
35
210
ns
ns
ns
SOURCE DRAINDIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
24
96
A
A
V
SD
(
)
t
rr
I
SD
= 24 A
I
SD
= 24 A
V
DD
= 100 V
(see test circuit, figure 5)
V
GS
= 0
1.6
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
di/dt = 100 A/
μ
s
T
j
= 150
o
C
1.4
41
60
μ
s
μ
C
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
SafeOperating Area
Thermal Impedance
STE24NA100
3/8
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