參數(shù)資料
型號： STF9NK60ZFD
元件分類： 保險絲支架，夾子&硬件
英文描述： Fuse Holder; Fuse Size/Group:13/32 x 1-1/2 "; Body Material:Thermoplastic; Leaded Process Compatible:Yes; Mounting Type:Screw/Quick Connect RoHS Compliant: Yes
中文描述： N溝道600V的0.85歐姆第7A TO-220/TO-220FP/D2PAK快速二極SUPERMESH功率MOSFET
文件頁數(shù)： 2/9頁
文件大?。?/td> 363K
代理商： STF9NK60ZFD
STP9NK60ZFD - STF9NK60ZFD - STB9NK60ZFD
2/9
ABSOLUTE MAXIMUM RATINGS
Symbol
( ) Pulse width limited by safe operating area
(1) I
SD
≤
7A, di/dt
≤
200A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
Parameter
Value
Unit
TO-220 / D
2
PAK
TO-220FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
600
V
600
V
Gate- source Voltage
± 30
V
Drain Current (continuos) at T
C
= 25°C
Drain Current (continuos) at T
C
= 100°C
7
7 (*)
A
4.3
4.3 (*)
A
Drain Current (pulsed)
28
28 (*)
A
Total Dissipation at T
C
= 25°C
Derating Factor
Gate source ESD (HBM-C=100pF, R=1.5K
)
Peak Diode Recovery voltage slope
104
32
W
0.83
0.26
W/°C
V
V
ESD(G-S)
dv/dt (1)
V
ISO
T
j
T
stg
4000
TBD
V/ns
V
Insulation Withstand Voltage (DC)
-
2500
Operating Junction Temperature
Storage Temperature
-55 to 150
°C
TO-220
D
2
PAK
1.02
TO-220FP
Unit
Rthj-case
Rthj-pcb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-pcb Max
(When mounted on minimum Footprint)
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering
Purpose
3.85
°C/W
°C/W
30
Rthj-amb
T
l
62.5
300
°C/W
°C
Parameter
Max Value
7
Unit
A
280
mJ
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
相關(guān)PDF資料
PDF描述
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