參數(shù)資料
型號(hào): STGW50NB60M
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 50A - 600V - TO-247 PowerMESH⑩ IGBT
中文描述: N溝道50A條- 600V的-對(duì)IGBT的247 PowerMESH⑩
文件頁(yè)數(shù): 9/9頁(yè)
文件大小: 299K
代理商: STGW50NB60M
9/9
STGW50NB60M
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STGW50NC60W 功能描述:IGBT 晶體管 Ultra fast series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGW60H60DLFB 功能描述:IGBT 600V 80A 375W TO-247 制造商:stmicroelectronics 系列:- 包裝:管件 零件狀態(tài):有效 IGBT 類型:溝槽型場(chǎng)截止 電壓 - 集射極擊穿(最大值):600V 電流 - 集電極(Ic)(最大值):80A 脈沖電流 - 集電極 (Icm):240A 不同?Vge,Ic 時(shí)的?Vce(on):2V @ 15V,60A 功率 - 最大值:375W 開關(guān)能量:626μJ(關(guān)) 輸入類型:標(biāo)準(zhǔn) 柵極電荷:306nC 25°C 時(shí) Td(開/關(guān))值:-/160ns 測(cè)試條件:400V,60A,5 歐姆,15V 反向恢復(fù)時(shí)間(trr):- 封裝/外殼:TO-247-3 安裝類型:通孔 供應(yīng)商器件封裝:TO-247 標(biāo)準(zhǔn)包裝:30
STGW60H65DF 功能描述:IGBT 晶體管 60 A 650V Field Stop Trench Gate IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGW60H65DFB 功能描述:IGBT 650V 80A 375W TO-247 制造商:stmicroelectronics 系列:- 包裝:管件 零件狀態(tài):有效 IGBT 類型:溝槽型場(chǎng)截止 電壓 - 集射極擊穿(最大值):650V 電流 - 集電極(Ic)(最大值):80A 脈沖電流 - 集電極 (Icm):240A 不同?Vge,Ic 時(shí)的?Vce(on):2V @ 15V,60A 功率 - 最大值:375W 開關(guān)能量:1.09mJ(開),626μJ(關(guān)) 輸入類型:標(biāo)準(zhǔn) 柵極電荷:306nC 25°C 時(shí) Td(開/關(guān))值:51ns/160ns 測(cè)試條件:400V,60A,5 歐姆,15V 反向恢復(fù)時(shí)間(trr):60ns 封裝/外殼:TO-247-3 安裝類型:通孔 供應(yīng)商器件封裝:TO-247 標(biāo)準(zhǔn)包裝:30
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