參數(shù)資料
型號(hào): STK11C68-5C55M
廠商: Electronic Theatre Controls, Inc.
英文描述: CMOS NV SRAM
中文描述: 的CMOS非易失SRAM
文件頁(yè)數(shù): 9/10頁(yè)
文件大小: 59K
代理商: STK11C68-5C55M
STK11C68-M
4-39
Internally, RECALLis a two step procedure. First, the
SRAM data is cleared and second, the nonvolatile
information is transferred into the SRAM cells. The
RECALLoperation in no way alters the data in the
EEPROM cells. The nonvolatile data can be recalled
an unlimited number of times.
On power-up, once V
CC
exceeds the V
CC
sense volt-
age of 4.0V, a RECALLcycle is automatically initiated.
The voltage on the V
CC
pin must not drop below 4.0V
once it has risen above it in order for the RECALLto
operate properly. Due to this automatic RECALL
SRAM operation cannot commence until t
RECALL
after
V
CC
exceeds 4.0V. 4.0V is a typical, characterized
value.
If the STK11C68-M is in a WRITE state at the end of
power-up RECALL the SRAM data will be corrupted.
To help avoid this situation, a 10K Ohm resistor should
be connected between W and system V
CC
.
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