參數(shù)資料
型號(hào): STP80NF55L-08
廠(chǎng)商: 意法半導(dǎo)體
英文描述: N-CHANNEL 55V - 0.0065ohm - 80A - TO-220/D2PAK STripFET⑩ II POWER MOSFET
中文描述: N溝道55V的- 0.0065ohm - 80A條- TO-220/D2PAK STripFET⑩二功率MOSFET
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 83K
代理商: STP80NF55L-08
STP80NF55L-06
N - CHANNEL 55V - 0.005
- 80A TO-220
STripFET
POWER MOSFET
I
TYPICAL R
DS(on)
= 0.005
I
LOW THRESHOLD DRIVE
I
LOGIC LEVEL DEVICE
DESCRIPTION
This Power MOSFET is the latest developmentof
STMicroelectronics
unique
Size
strip-based
process.
transistor shows extremely high packing density
for
low
on-resistance,
characteristics and less critical alignment steps
therefore
a
remarkable
reproducibility.
”Single
The
Feature
resulting
rugged
avalanche
manufacturing
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SOLENOID AND RELAYDRIVERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC & DC-AC CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
October 1999
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Parameter
Value
55
55
±
20
80
57
320
210
1.4
1
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/
o
C
J
o
C
o
C
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
(
)
Pulse width limitedby safe operating area
E
AS
(
1
)
T
stg
T
j
(
1
)
starting T
j
= 25
o
C, I
D
=40A , V
DD
= 30V
TYPE
V
DSS
R
DS(on)
< 0.0065
I
D
STP80NF55L-06
55 V
80 A
1
2
3
TO-220
1/8
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