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參數(shù)資料
| 型號(hào)： | STR-G6653 |
| 廠商： | Allegro MicroSystems, Inc. |
| 英文描述： | OFF-LINE QUASI-RESONANT FLYBACK SWITCHING REGULATOR |
| 中文描述： | 離線式準(zhǔn)諧振反激式開關(guān)穩(wěn)壓器 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 175K |
| 代理商： | STR-G6653 |
The STR-G6651 is specifically designed to satisfy the requirements
for increased integration and reliability in off-line quasi-resonant flyback
converters. This device incorporates the primary control and drive
circuit with a discrete avalanche-rated power MOSFET.
Cycle-by-cycle current limiting, under-voltage lockout with hyster-
esis, over-voltage protection, and thermal shutdown protects the power
supply during the normal overload and fault conditions. Over-voltage
protection and thermal shutdown are latched after a short delay. The
latch may be reset by cycling the input supply. Low-current startup and
a low-power standby mode selected from the secondary circuit completes
a comprehensive suite of features. The device is provided in a five-pin
over-molded TO-220 style package, affording dielectric isolation without
compromising thermal characteristics. Two lead forms are available
(with and without the suffix ‘-LF’) to accommodate printed wiring board
layout or mechanical constraints.
Proven in substantial volumes, the STR-G6651 is a robust low-risk
solution for off-line power supplies particularly where management of
EMI at the source is a significant element of the system design.
FEATURES
I
Quasi-Resonant Operation
I
Output Power to 66 W
I
Low-Loss, Pulse-Ratio-Control Standby Mode
I
Temperature-Compensated Pulse-by-Pulse Over-Current Protection
I
Latched Over-Voltage and Thermal Protection
I
Under-Voltage Lockout with Hysteresis
I
Active Low-Pass Filter for Enhanced Light-Load Stability
I
Switched Attenuation of Leading-Edge Current-Sensing Signal
I
Regulated Soft Gate Drive
I
Adjustable Switching Speed for EMI Control
I
Overmolded Five-Pin Package
OFF-LINE QUASI-RESONANT
FLYBACK SWITCHING REGULATOR
Always order by complete part number:
STR-G6651
.
D
2
STR-G6651
ABSOLUTE MAXIMUM RATINGS
at T
A
= +25
°
C
Control Supply Voltage, V
IN
. . . . . . .
35 V
Drain-Source Voltage, V
DS
. . . . . . . .
650 V
Drain Current, I
D
continuous . . . . . . . . . . . . . . . . . .
2.7 A
single-pulse, t
w
≤
1 ms . . . . . . . .
7.2 A
Avalanche Energy, E
AS
single-pulse . . . . . . . . . . . . . . .
158 mJ
Over-Current Protection Voltage Range,
V
OCP
. . . . . . . . . . . . . . .
-0.3 V to +6 V
Insulation RMS Voltage,
V
WM(RMS)
. . . . . . . . . . . . . . . . . .
2000 V
Package Power Dissipation, P
D
control (V
IN
x I
IN(ON)
) . . . . . . . . .
0.8 W
total . . . . . . . . . . . . . . . . . . .
See Graph
FET Channel Temperature, T
J
. . .
+150
°
C
Internal Frame Temperature, T
F
. .
+125
°
C
Operating Temperature Range,
T
A
. . . . . . . . . . . . . . .
-20
°
C to +125
°
C
Storage Temperature Range,
T
S
. . . . . . . . . . . . . . .
-40
°
C to +125
°
C
S
D
O
&
G
Dwg. PK-011
V
I
1
2
3
4
5
UVLO
OVP
TSD
LATCH
OSC.
O
FDBK
S
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