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參數(shù)資料
| 型號： | STS4NM20N |
| 英文描述： | N-CHANNEL 200V 0.11 OHM 4A SO-8 ULTRA LOW GATE CHARGE MDMESH II MOSFET |
| 中文描述： | N溝道200伏0.11歐姆4A條的SO - 8超低柵極電荷的MDmesh MOSFET的二 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 138K |
| 代理商： | STS4NM20N |
1/6
TARGET DATA
March 2003
STS4NM20N
N-CHANNEL 200V - 0.11
- 4A SO-8
ULTRA LOW GATE CHARGE MDmesh II MOSFET
I
WORLDWIDE LOWEST GATE CHARGE
I
TYPICAL R
DS
(on) = 0.11
I
HIGH dv/dt and AVALANCHE CAPABILITIES
I
LOW INPUT CAPACITANCE
I
LOW GATE RESISTANCE
I
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
This 200V MOSFET with a new advanced layout
brings all unique advantages of MDmesh technolo-
gy to lower voltages. The device exhibits worldwide
lowest gate charge for any given on-resistance.Its
use is therefore ideal as primary switch in isolated
DC-DC converters for Telecom and Computer appli-
cations.Used in combination with secondary-side
low-voltage STripFET
TM
products, it contributes to
reducing losses and boosting efficiency
APPLICATIONS
The MDmesh
TM
family is very suitable for increasing
power density allowing system miniaturization and
higher efficiencies
ORDERING INFORMATION
SALES TYPE
TYPE
V
DSS
R
DS(on)
I
D
STS4NM20N
200 V
< 0.13
4A
MARKING
PACKAGE
PACKAGING
STS4NM20N
S4NM20N
SO-8
TAPE & REEL
SO-8
INTERNAL SCHEMATIC DIAGRAM
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