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參數(shù)資料
| 型號： | SUB15P01-52 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 8-V (D-S), 175C MOSFET |
| 中文描述： | P通道8 - V（下局副局長），175C MOSFET的 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 48K |
| 代理商： | SUB15P01-52 |
SUP/SUB15P01-52
Vishay Siliconix
www.vishay.com
2
Document Number: 71085
S-20966
—
Rev. C, 01-Jul-02
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
=
–
250 A
–
8
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
–
250 A
–
0.45
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8 V
100
nA
V
DS
=
–
6.4 V, V
GS
= 0 V
–
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
–
6.4 V, V
GS
= 0 V, T
J
= 125 C
–
50
V
DS
=
–
6.4 V, V
GS
= 0 V, T
J
= 175 C
–
150
V
DS
=
–
5 V, V
GS
=
–
4.5 V
–
25
On-State Drain Current
a
I
D(on)
V
DS
=
–
5 V, V
GS
=
–
2.5 V
–
10
A
V
GS
=
–
4.5 V, I
D
=
–
10 A
0.043
0.052
V
GS
=
–
4.5 V, I
D
=
–
10 A, T
J
= 125 C
0.065
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
=
–
4.5 V, I
D
=
–
10 A, T
J
= 175 C
0.075
V
GS
=
–
2.5 V, I
D
=
–
5 A
0.070
V
GS
=
–
1.8 V, I
D
=
–
2 A
0.105
Forward Transconductance
a
g
fs
V
DS
=
–
5 V, I
D
=
–
10 A
16
S
Dynamic
b
Input Capacitance
C
iss
1300
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
=
–
4 V, f = 1 MHz
430
pF
Reversen Transfer Capacitance
C
rss
245
Total Gate Charge
c
Q
g
10.5
15
Gate-Source Charge
c
Q
gs
V
=
–
4 V,
V
=
–
4.5 V, I
=
–
10 A
DS
GS
1.6
nC
Gate-Drain Charge
c
Q
gd
D
2
Turn-On Delay Time
c
t
d(on)
10
20
Rise Time
c
t
r
V
DD
=
–
4 V, R
L
= 0.22
–
15 A, V
GEN
=
–
4.5 V, R
= 2.5
16
25
Turn-Off Delay Time
c
t
d(off)
I
D
30
45
ns
Fall Time
c
t
f
G
25
40
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
b
Continuous Current
I
s
–
15
Pulsed Current
I
SM
–
25
A
Forward Voltage
a
V
SD
I
F
=
–
15 A, V
GS
= 0 V
–
1.5
V
Reverse Recovery Time
t
rr
45
75
ns
Peak Reverse Recovery Current
I
RM(REC)
I
=
–
15 A, di/dt = 100 A/ s
F
–
1
–
1.5
A
Reverse Recovery Charge
Q
rr
0.023
0.056
C
Notes:
a.
b.
c.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
300 s, duty cycle
2%.
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