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參數(shù)資料
| 型號： | SUM110N05-06L |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 中文描述： | 250 的低電流運(yùn)算，低反向泄露，低噪聲穩(wěn)壓二極管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 41K |
| 代理商： | SUM110N05-06L |
FEATURES
TrenchFET Power MOSFET
175 C Junction Temperature
New Low Thermal Resistance Package
APPLICATIONS
Automotive and Industrial
SUM110N05-06L
Vishay Siliconix
New Product
Document Number: 72005
S-21713—Rev. A, 07-Oct-02
www.vishay.com
1
N-Channel 55-V (D-S), 175 C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
r
DS(on)
( )
I
D
(A)
0.006 @ V
GS
= 10 V
0.085 @ V
GS
= 4.5 V
110
55
92
D
G
S
N-Channel MOSFET
TO-263
S
D
G
Top View
SUM110N05-06L
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
55
Gate-Source Voltage
V
GS
20
V
T
C
= 25 C
T
C
= 125 C
110
Continuous Drain Current
(T
J
= 175 C)
I
D
63
Pulsed Drain Current
I
DM
I
AR
E
AR
240
A
Avalanche Current
60
Repetitive Avalanche Energy
a
L = 0.1 mH
180
mJ
T
C
= 25 C
T
A
= 25 C
c
158
b
Maximum Power Dissipation
P
D
3.7
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 175
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Junction-to-Ambient—PCB Mount
c
R
thJA
40
Junction-to-Case
R
thJC
0.95
C/W
Notes
a.
b.
c.
Duty cycle
See SOA curve for voltage derating.
When mounted on 1” square PCB (FR-4 material).
1%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SUM110N05-06L | 制造商:Vishay Siliconix 功能描述:MOSFET N D2-PAK |
| SUM110N05-06L-E3 | 功能描述:MOSFET 55V 100A 158W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUM110N05-06L-E3/BKN | 制造商:Vishay Siliconix 功能描述:N-Channel 55-V (D-S) 175 DEG.C MOSFET |
| SUM110N06-04L | 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET N-CH 60V 110A 3-Pin(2+Tab) TO-263 |
| SUM110N06-04L | 制造商:Vishay Siliconix 功能描述:MOSFET N D2-PAK |
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