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參數(shù)資料
| 型號： | SUM85N03-06P |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 中文描述： | 250 的低電流運算，低反向泄露，低噪聲穩(wěn)壓二極管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 41K |
| 代理商： | SUM85N03-06P |
FEATURES
TrenchFET Power MOSFET
175 C Junction Temperature
PWM Optimized for High Efficiency
New Package with Low Thermal Resistance
APPLICATIONS
Buck Converter
– High Side
– Low Side
Synchronous Rectifier
– Secondary Rectifier
SUM85N03-06P
Vishay Siliconix
New Product
Document Number: 71903
S-20921—Rev. A, 01-Jul-02
www.vishay.com
1
N-Channel 30-V (D-S) 175 C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
r
DS(on)
( )
I
D
(A)
0.006 @ V
GS
= 10 V
0.009 @ V
GS
= 4.5 V
85
30
77
D
G
S
N-Channel MOSFET
TO-263
S
D
G
Top View
SUM85N03-06P
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
Gate-Source Voltage
V
GS
20
V
T
C
= 25 C
T
C
= 100 C
85
Continuous Drain Current
(T
J
= 175 C)
I
D
67
Pulsed Drain Current
I
DM
I
AR
E
AR
200
A
Avalanche Current
45
Repetitive Avalanche Energy
a
L = 0.1 mH
101
100
b
mJ
T
C
= 25 C
T
A
= 25 C
c
Maximum Power Dissipation
a
P
D
3.75
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 175
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
PCB Mount
c
40
Junction-to-Ambient
Free Air
R
thJA
62.5
C/W
Junction-to-Case
R
thJC
1.5
Notes
a.
b.
c.
Duty cycle
See SOA curve for voltage derating.
When mounted on 1” square PCB (FR-4 material).
1%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SUM85N03-06P_07 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) 175Celsius MOSFET |
| SUM85N03-06P-E3 | 功能描述:MOSFET 30V 85A 100W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUM85N03-07P | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) 175C MOSFET |
| SUM85N03-07P-E3 | 功能描述:MOSFET 30V 85A 93W 7.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUM85N03-07P-T1-E3 | 制造商:Vishay Intertechnologies 功能描述:N CHANNEL MOSFET, 30V, 85A, Transistor Polarity:N Channel, Continuous Drain Curr |
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