參數(shù)資料
型號(hào): SYS82000RKXDI-10
英文描述: 2M x 8 SRAM MODULE
中文描述: 200萬(wàn)× 8的SRAM模塊
文件頁(yè)數(shù): 2/7頁(yè)
文件大?。?/td> 104K
代理商: SYS82000RKXDI-10
SYS82000RKXD - 70/85/10/12
Issue 1.3 February 2000
2
Parameter
Symbol Test Condition
Mn Typ
max
Unit
I/P Leakage Current
Address,OE,WE
I
LI
I
LO
I
CC1
I
SB1
I
SB2
I
SB3
V
OL
V
OH
0V < V
IN
< V
CC
CS = V
IH,
V
I/O
= GND to V
CC
Min. Cycle, CS = V
IL
,V
IL
<V
IN
<V
IH
CS = V
IH
CS
>
V
CC
-0.2V, 0.2<V
IN
<V
CC
-0.2V
CS
>
V
CC
-0.2V, 0.2<V
IN
<V
CC
-0.2V
I
OL
= 2.1mA
I
OH
= -1.0mA
-4
-
4
μA
Output Leakage Current
-4
-
4
μA
Average Supply Current
-
-
110
mA
Standby Supply Current
TTL levels
-
-
12
mA
CMOS levels
-
-
8
mA
μ
A
-L Version (CMOS)
-
-
400
Output Voltage
-
-
0.4
V
2.4
-
-
V
Typical values are at V
CC
=5.0V,T
A
=25
o
C and specified loading.
Voltage on any pin relative to V
SS
Power Dissipation
Storage Temperature
V
T
P
T
T
STG
(2)
-0.3
-
-55
-
7.0
-
125
V
W
4.0
-
o
C
Notes :
(1)
Stresses above those listed may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at those or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
DC OPERATING CONDITIONS
Parameter
Symbol
Min
Typ
Max
Unit
Absolute Maximum Ratings
(1)
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temperature
V
CC
V
IH
V
IL
T
A
T
AI
4.5
2.2
-0.3
0
-40
5.0
-
-
-
-
5.5
V
V
V
V
CC
+0.3
0.8
70
85
(Commercial)
o
C
(Industrial)
o
C
Capacitance
(V
CC
=5V±10%,T
A
=25
o
C)
Note: Capacitance calculated, not measured.
Parameter
Symbol Test Condition
max
Unit
Input Capacitance
(Address,OE,WE)
I/P Capacitance
(other)
I/O Capacitance
C
IN1
C
IN2
C
I/O
V
IN
= 0V
V
IN
= 0V
V
I/O
= 0V
32
8
40
pF
pF
pF
DC Electrical Characteristics
(V
CC
=5V±10%)
T
A
0 to 70
o
C
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