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參數資料
| 型號： | SYS82000RKXDL-10 |
| 英文描述： | 2M x 8 SRAM MODULE |
| 中文描述： | 200萬× 8的SRAM模塊 |
| 文件頁數： | 6/7頁 |
| 文件大?。?/td> | 104K |
| 代理商： | SYS82000RKXDL-10 |
SYS82000RKXD - 70/85/10/12
Issue 1.3 February 2000
6
Write Cycle No.2 Timing Waveform
(1,5)
t
R
t
CDR
4.5V
2.2V
4.5V
2.2V
0V
DATA RETENTION MODE
Vcc
CS
V
DR
CS > Vcc -0.2V
Data Retention Waveform
AC Write Characteristics Notes
(1) All write cycle timing is referenced from the last valid address to the first transition address.
(2) All writes occur during the overlap of CS and WE low.
(3) If OE, CS, and WE are in the Read mode during this period, the I/O pins are low impedance state.
Inputs of opposite phase to the output must not be applied because bus contention can occur.
(4) Dout is the Read data of the new address.
(5) OE is continuously low.
(6) Address is valid prior to or coincident with CS and WE low, too avoid inadvertant writes.
(7) CS or WE must be high during address transitions.
(8) When CS is low : I/O pins are in the output state. Input signals of opposite phase leading to the
output should not be applied.
(9) Defined as the time at which the outputs achieve open circuit conditions and are not referenced to
output voltage levels. These parameters are sampled and not 100% tested.
t
AW
WP(2)
t
CW
WR(7)
WC
t
AS(6)
DW
DH
OH
t
OW
WHZ(3,9)
Don't
Care
t
t
t
t
Address
CS
WE
Dout
Din
t
t
t
High-Z
High-Z
(4)
(8)
Data Valid
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| SYS82000RKXDL-12 | 2M x 8 SRAM MODULE |
| SYS82000RKXDLI-10 | 2M x 8 SRAM MODULE |
| SYS82000RKXDLI-12 | 2M x 8 SRAM MODULE |
| SYS82000RKXDLI-85 | 2M x 8 SRAM MODULE |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SYS82000RKXDL-12 | 制造商:MOSAIC 制造商全稱:MOSAIC 功能描述:2M x 8 SRAM MODULE |
| SYS82000RKXDL-85 | 制造商:MOSAIC 制造商全稱:MOSAIC 功能描述:2M x 8 SRAM MODULE |
| SYS82000RKXDLI-10 | 制造商:MOSAIC 制造商全稱:MOSAIC 功能描述:2M x 8 SRAM MODULE |
| SYS82000RKXDLI-12 | 制造商:MOSAIC 制造商全稱:MOSAIC 功能描述:2M x 8 SRAM MODULE |
| SYS82000RKXDLI-85 | 制造商:MOSAIC 制造商全稱:MOSAIC 功能描述:2M x 8 SRAM MODULE |
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