參數(shù)資料
型號: SYS8512FKXL-10
英文描述: 512K x 8 SRAM MODULE
中文描述: 為512k × 8的SRAM模塊
文件頁數(shù): 2/7頁
文件大小: 69K
代理商: SYS8512FKXL-10
ISSUE 5.0 November 1999
SYS8512FKX-70/85/10/12
2
DC OPERATING CONDITIONS
Absolute Maximum Ratings
(1)
DC Electrical Characteristics
(V
CC
=5V±10%)
T
A
0 to 70
O
C
Recommended Operating Conditions
Parameter
Voltage on any pin relative to V
SS
Power Dissipation
Storage Temperature
Notes :
(1) Stresses above those listed may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at those or any other conditions above those indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
(2) V
t
can be -3.5V pulse of less than 20ns.
Symbo
V
T
P
T
T
STG
mn
-0.3V
-
-55
typ
-
1
-
max
+7
-
+150
unt
V
W
o
C
Parameter
Symbol
mn
typ
max
unit
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temperature
V
CC
V
IH
V
IL
T
A
T
AI
4.5
2.2
-0.3
0
-40
5.0
-
-
-
-
5.5
V
V
V
Vcc + 0.3
0.8
70
85
o
C
o
C (I)
Paameter
Symbol
Test Condition
min
typ
(2)
max Unit
I/P Leakage Current
Output Leakage Current
A0~A16, OE
D0~D7
I
LI1
I
LO
0V - V
IN
- V
CC
CS = V
IH,
V
I/O
= GND to V
CC
-
-
-
-
±8
±8
μA
μA
Operating Supply Current
I
CC
CS = V
IL
,I
I/O
= 0mA, V
IL
- V
IN
- V
CC
-2.1V
-
16
45
mA
Average Supply Current
TTL levels
I
CC1
Min. Cycle, CS = V
IL
, V
IN
= V
IL
/V
CC
-2.1V
-
70
110
mA
CMOS levels
I
CC2
Min. Cycle, CS - 0.2V, V
IN
= 0.2V/V
CC
-0.2V
-
24
40
mA
Standby Supply Current
TTL levels
I
SB
CS,A17-A18 = V
CC
-2.1V, V
IL
- V
IN
- V
CC
-2.1V
-
5
12
mA
CMOS levels
I
SB1
CS,A17-A18 = V
CC
-0.2V, 0.2 - V
IN
- V
CC
-0.2V
-
0.2
8
mA
-L Part
I
SB2
As above
-
10
500
μA
Output Voltage
V
OL
I
OL
= 2.1mA
-
-
0.4
V
V
OH
I
OH
= -1.0mA
2.4
-
-
V
Typical values are at V
CC
=5.0V,T
A
=25
o
C and specified loading.
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