參數(shù)資料
型號: SZMMBZ15VDLT1
廠商: ON SEMICONDUCTOR
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB
封裝: PLASTIC, CASE 318-08, TO-236, 3 PIN
文件頁數(shù): 2/5頁
文件大?。?/td> 85K
代理商: SZMMBZ15VDLT1
MMBZ15VDLT1, MMBZ27VCLT1
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation @ 1.0 ms (Note 1) @ TL ≤ 25°C
Ppk
40
Watts
Total Power Dissipation on FR-5 Board (Note 2) @ TA = 25°C
Derate above 25
°C
°PD°
225
1.8
°mW°
mW/
°C
Thermal Resistance Junction-to-Ambient
RqJA
556
°C/W
Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25°C
Derate above 25
°C
°PD°
300
2.4
°mW
mW/
°C
Thermal Resistance Junction-to-Ambient
RqJA
417
°C/W
Junction and Storage Temperature Range
TJ, Tstg
-55 to +150
°C
Lead Solder Temperature - Maximum (10 Second Duration)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Nonrepetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 6.
2. FR-5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
VBR
Maximum Temperature Coefficient of VBR
IF
Forward Current
VF
Forward Voltage @ IF
Uni-Directional TVS
IPP
IF
V
I
IR
IT
VRWM
VC VBR
VF
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA)
Device
Marking
VRWM
IR @ VRWM
Breakdown Voltage
VC @ IPP (Note 5)
VBR
VBR (Note 4) (V)
@ IT
VC
IPP
Volts
nA
Min
Nom
Max
mA
V
A
mV/
5C
MMBZ15VDLT1, G*
15D
12.8
100
14.3
15
15.8
1.0
21.2
1.9
12
(VF = 1.1 V Max @ IF = 200 mA)
Device
Marking
VRWM
IR @ VRWM
Breakdown Voltage
VC @ IPP (Note 5)
VBR
VBR (Note 4) (V)
@ IT
VC
IPP
Volts
nA
Min
Nom
Max
mA
V
A
mV/
5C
MMBZ27VCLT1, G*
27C
22
50
25.65
27
28.35
1.0
38
1.0
26
*The “G” suffix indicates Pb-Free package available.
4. VBR measured at pulse test current IT at an ambient temperature of 25°C.
5. Surge current waveform per Figure 5 and derate per Figure 6
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