參數(shù)資料
型號: SZMMBZ15VDLT1
廠商: ON SEMICONDUCTOR
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB
封裝: PLASTIC, CASE 318-08, TO-236, 3 PIN
文件頁數(shù): 3/5頁
文件大小: 85K
代理商: SZMMBZ15VDLT1
MMBZ15VDLT1, MMBZ27VCLT1
http://onsemi.com
3
-40
+85
17
BREAKDOWN
VOL
TAGE
(VOL
TS)
Figure 1. Typical Breakdown Voltage
versus Temperature
TEMPERATURE (
°C)
+125
16
15
14
13
(V
BR
@
I
T
)
+25
MMBZ15VDLT1
-55
+85
29
BREAKDOWN
VOL
TAGE
(VOL
TS)
Figure 2. Typical Breakdown Voltage
versus Temperature
TEMPERATURE (
°C)
+125
28
27
26
25
(V
BR
@
I
T
)
+25
MMBZ27VCLT1
TYPICAL CHARACTERISTICS
BIDIRECTIONAL
UNIDIRECTIONAL
BIDIRECTIONAL
10000
10
0.01
TEMPERATURE (
°C)
I R
(nA)
Figure 3. Typical Leakage Current
versus Temperature
100
1
0.1
-40
+85
+125
+25
0
25
50
75
100
125
150
175
300
250
200
150
100
50
0
Figure 4. Steady State Power Derating Curve
P
D
,POWER
DISSIP
A
T
ION
(mW)
TEMPERATURE (
°C)
FR-5 BOARD
ALUMINA SUBSTRATE
V
ALUE
(%)
100
50
0
01
2
3
4
t, TIME (ms)
Figure 5. Pulse Waveform
tr ≤ 10 ms
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF IPP.
HALF VALUE—
IPP
2
PEAK VALUE—IPP
tP
100
90
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
175
200
TA, AMBIENT TEMPERATURE (°C)
Figure 6. Pulse Derating Curve
PEAK
PULSE
DERA
TING
IN
%
OF
PEAK
POWER
OR
CURRENT
@
T
A
=
25
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