參數(shù)資料
      型號(hào): T15V2M16B-70C
      廠商: TM Technology, Inc.
      英文描述: 128K X 16 LOW POWER CMOS STATIC RAM
      中文描述: 128K的× 16低功耗CMOS靜態(tài)RAM
      文件頁數(shù): 10/12頁
      文件大?。?/td> 93K
      代理商: T15V2M16B-70C
      TE
      CH
      tm
      DATA RETENTION CHARACTERISTICS
      T15V2M16B
      TM Technology Inc. reserves the right
      P. 10
      to change products or specifications without notice.
      Publication Date: NOV. 2002
      Revision:A
      PARAMETER
      SYM.
      V
      DR
      I
      CCDR
      t
      CDR
      TEST CONDITION
      CE
      V
      CC
      -0.2V
      V
      IN
      Vcc -0.2V or
      V
      IN
      0.2V
      MIN.
      2.0
      -
      0
      MAX.
      -
      15/40*
      -
      UNIT
      V
      uA
      ns
      V
      CC
      for Data Retention
      Data Retention Current
      Chip Deselect to Data Retention
      Time
      Operation Recovery Time
      t
      R
      t
      RC
      -
      ns
      *note : the data retention current
      max=40uA’ only for –45ns
      .
      DATA RETENTION WAVEFORM
      (Ta =
      -10 ~ +70
      °
      C /
      -40
      °
      C ~ 85
      °
      C)
      tCDR
      C E
      tR
      V c c
      CE >Vcc- 0.2V
      VDR > 2.0V
      VIH
      VIH
      Vcc_typ
      Vcc_typ
      Data Retention Mode
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