參數(shù)資料
型號(hào)： T436416A-8SG
廠商： TM Technology, Inc.
英文描述： 4M X 16 SDRAM
中文描述： 4米× 16內(nèi)存
文件頁(yè)數(shù)： 1/29頁(yè)
文件大小： 712K
代理商： T436416A-8SG
TE
CH
tm
SDRAM
FEATURES
3.3V power supply
Four banks operation
LVTTL compatible with multiplexed address
All inputs are sampled at the positive going
edge of system clock
Burst Read Single-bit Write operation
DQM for masking
Auto refresh and self refresh
64ms refresh period (4K cycle)
MRS cycle with address key programs
- CAS Latency ( 2 & 3 )
- Burst Length ( 1 , 2 , 4 , 8 & full page)
- Burst Type (Sequential & Interleave)
Available package type in 54 pin TSOP(II)
Operating temperature : 0 ~ +70
°
C
ORDERING INFORMATION
T436416A
TM Technology Inc. reserves the right
P. 1
to change products or specifications without notice.
Publication Date: MAY. 2003
Revision: B
4M x 16 SDRAM
1M x 16bit x 4Banks Synchronous DRAM
GRNERAL DESCRIPTION
The T436416A is 67,108,864 bits synchronous
high data rate Dynamic RAM organized as
4 x 1,048,576 words by 16 bits , fabricated with
high performance CMOS technology .
Synchronous design allows precise cycle control
with the use of system clock I/O transactions are
possible on every clockcycle . Range of operating
frequencies , programmable burst length and
programmable latencies allow the same device to
be useful for a variety of high bandwidth , high
performance memory system applications.
PIN ARRANGEMENT (
Top View)
D Q 1
V
D D
4 6
4 5
4 4
4 3
4 1
4 2
4 0
3 6
3 5
3 4
3 3
3 2
3 1
3 0
2 9
1
2
3
4
6
5
7
8
9
1 1
1 5
1 6
1 7
1 8
1 9
2 0
V
D D Q
D Q 1 1
D Q 1 0
A 8
A 7
A 9
1 0
2 1
2 2
4 7
4 8
4 9
5 0
V
S S Q
D Q 2
A 0
A 1
D Q 1 5
D Q 1 4
V ss
2 3
2 4
2 5
2 8
2 7
2 6
D Q 3
D Q 0
V
D D Q
D Q 4
D Q 5
V
S S Q
D Q 6
R A S
C S
B A 1
A 1 0 /A P
A 2
A 3
V
D D
V
S S Q
D Q 1 3
D Q 1 2
D Q 9
U D Q M
N .C
C L K
C K E
V ss
A 6
A 5
A 4
1 2
1 3
1 4
3 9
3 8
3 7
D Q 7
V
D D
L D Q M
D Q 8
V ss
N .C /R F U
W E
C A S
5 4 P IN T S O P (II)
(4 0 0 m il x 8 7 5 m il)
(0 .8 m m P IN P IT C H )
5 1
5 2
5 3
5 4
V
D D Q
B A 0
V
D D Q
V
S S Q
A 1 1
PART NO.
MAX
FREQUENCY
166 MHz
PACKAGE
T436416A-6S
54 pin TSOP(II)
T436416A-7S
143 MHz
54 pin TSOP(II)
T436416A-7.5S
T436416A-8S
133 MHz
125 MHz
54 pin TSOP(II)
54 pin TSOP(II)
T436416A-10S
100 MHz
54 pin TSOP(II)
54 pin TSOP(II)
lead-free
54 pin TSOP(II)
lead-free
54 pin TSOP(II)
lead-free
54 pin TSOP(II)
lead-free
54 pin TSOP(II)
lead-free
T436416A-6SG
166 MHz
T436416A-7SG
143 MHz
T436416A-7.5SG
133 MHz
T436416A-8SG
125 MHz
T436416A-10SG
100 MHz
相關(guān)PDF資料
PDF描述
T436416C 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416C-6S 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416C-6SG 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416C-7S 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416C-7SG 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
T436416C 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416C-6S 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416C-6SG 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416C-7S 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416C-7SG 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
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