參數資料
型號: T436416C-6S
廠商: TM Technology, Inc.
英文描述: 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
中文描述: 4米× 16 SDRAM的100萬x 16Bit的X 4Banks同步DRAM
文件頁數: 23/28頁
文件大?。?/td> 651K
代理商: T436416C-6S
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CH
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Read Interrupted by Precharge Command & Read Burst Stop Cycle @ Burst Length=Full Page
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T436416C
TM Technology Inc. reserves the right
P.23
to change products or specifications without notice.
Publication Date: AUG. 2004
Revision: A
C L O C K
C K E
C S
R A S
C A S
A D D R
A 1 3 ,A 1 2
A 1 0 /A P
C L = 2
C L = 3
W E
1 0
1 1
1 2
1 3
1 4
1 5
1 6
1 7
1 8
1 9
H IG H
D Q M
D Q
:D o n 't care
R A a
C A a
C A b
R A a
Q A a0
Q A a1
Q A a2
Q A a3
Q A a4
Q A a0
Q A a1
Q A a2
Q A a3
Q A a4
Q A b 0
Q A b 0
Q A b 1
Q A b 1
Q A b 2
Q A b 3
Q A b 2
Q A b 4
Q A b 3
Q A b 5
Q A b 4
Q A b 5
* N o te 2
1
2
2
1
R ow A ctive
(A -B an k )
R ead (A -
B an k )
R ead (A -
B an k )
B u rst S top
P recharge
(A -B an k )
*Note : 1. Burst can’t end in full page mode, so auto precharge can’t issue.
2. About the valid DQs after burst stop, it is same as the case of RAS interrupt.
Both cases are illustrated above timing diagram. See the lable 1,2 on them.
But at burst write, burst stop and RAS interrupt should be compared carefully.
Refer the timing diagram of ‘Full Page write burst stop cycle’.
3. Burst stop is valid at every burst length.
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相關代理商/技術參數
參數描述
T436416C-6SG 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
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T436416D-5C 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM