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參數(shù)資料
| 型號(hào)： | T436416C-6S |
| 廠商： | TM Technology, Inc. |
| 英文描述： | 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| 中文描述： | 4米× 16 SDRAM的100萬x 16Bit的X 4Banks同步DRAM |
| 文件頁數(shù)： | 24/28頁 |
| 文件大?。?/td> | 651K |
| 代理商： | T436416C-6S |
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TE
CH
tm
Write Interrupted by Prechareg Command & Write Burst Stop Cycle @ Burst Length=Full Page
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T436416C
TM Technology Inc. reserves the right
P.24
to change products or specifications without notice.
Publication Date: AUG. 2004
Revision: A
C LO C K
C K E
C S
R A S
C A S
A D D R
A 13,A 12
A 10/A P
D Q
W E
D Q M
10
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H IG H
:D on't care
R ow A ctive
(A -B ank)
W rite (A -
B ank)
B urst Stop
W rite (A -
B ank)
Precharge
(A -B ank)
RAa
CAa
CAb
RAa
D A a0
D A a1
D A a2
D A a3
D A a4
D A b0
D A b1
D A b2
D A b3
D A b4
D A b5
*N ote3
t
BD L
t
RD L
*Note : 1. Burst can’t end in full page mode, so auto precharge can’t issue.
2. Data-in at the cycle of interrupted by precharge can not be written into the corresponding memory cell.
It is defined by AC parameter of
t
RDL
.
DQM at write interrupted by precharge command is needed to prevent invalid write.
Input data after Row precharge cycle will be masked internally.
3. Burst stop is valid at every burst length.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| T436416C-6SG | 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416C-7S | 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416C-7SG | 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416D | 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416D-5C | 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| T436416C-6SG | 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416C-7S | 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416C-7SG | 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416D | 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416D-5C | 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
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