參數(shù)資料
型號: T436416D-7S
廠商: TM Technology, Inc.
英文描述: 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
中文描述: 4米× 16 SDRAM的100萬x 16Bit的X 4Banks同步DRAM
文件頁數(shù): 23/73頁
文件大?。?/td> 734K
代理商: T436416D-7S
TE
CH
tm
Figure 4. Power on Sequence and Auto Refresh (CBR)
T436416D
TM Technology Inc. reserves the right
P. 23
to change products or specifications without notice.
Publication Date: FEB. 2007
Revision: A
T0
T 1 T2
T3
T4
T5
T6
T7
T8
T9
T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
CS#
RAS#
CAS#
WE#
BA0,1
A10
A0-A9,A11
DQM
DQ
t
CK2
High level
is reauired
Minimum of 2 Refresh Cycles are required
Hi-Z
t
RP
t
RC
Address Key
Inputs must be
stable for 200
μ
s
PCommand
1stCommand
2ndCommand
Mode Register
CoAny
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
T436416D-7SG 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
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T436432B-10S 制造商:TMT 制造商全稱:TMT 功能描述:2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM
T436432B-10SG 制造商:TMT 制造商全稱:TMT 功能描述:2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM
T436432B-55S 制造商:TMT 制造商全稱:TMT 功能描述:2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM